LED flip chip and manufacturing method thereof

Abstract

The invention provides an LED (light emitting diode) flip chip which comprises a sapphire substrate, an N-shaped layer, a light emitting layer, a P-shaped layer, a reflecting layer, a first insulating layer, an N bonding pad layer and a P bonding pad layer, wherein the N-shaped layer, the light emitting layer, the P-shaped layer, the reflecting layer and the first insulating layer are arranged on the sapphire substrate in sequence from bottom to up; N leading wire electrodes and P leading wire electrodes are arranged on the first insulating layer; the N leading wire electrodes are conductively connected with the N-shaped layer; the P leading wire electrodes are in conductively connected with the reflecting layer; the N bonding pad layer is conductively connected with the N leading wire electrodes; the P bonding pad layer is conductively connected with the P leading wire electrodes; a second insulating layer is arranged on the N leading wire electrodes and the P leading wire electrodes; through holes are formed in the second insulating layer; and the N bonding pad layer and the P bonding pad layer are in contact with the N leading wire electrodes and the P leading wire electrodes through the through holes respectively. The LED flip chip and the manufacturing method thereof are beneficial to heat radiation of the LED flip chip, enable the LED flip chip to have a favorable insulating effect, and improve the stability of the LED flip chip.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to an LED flip chip and a manufacturing method thereof. Background technique [0002] The structure of a traditional GaN-based LED chip on a sapphire substrate is as follows: figure 1 As shown, an N-type GaN layer 2, a quantum well QW active region 3, a P-type GaN layer 4, and a current spreading layer 5 are sequentially arranged on the substrate 101 from bottom to top, and on the current spreading layer 5 and the N-type GaN layer P electrodes 6 and N electrodes 7 are arranged in distribution. In this structure, the P electrode 6 is just located on the light-emitting surface of the chip; at the same time, a small part of the P-type GaN layer 4 and the quantum well QW active region 3 are etched, so that the N-electrode 7 forms an electrical connection with the N-type GaN layer 2 below. touch. Light is taken out from the upper P-type GaN layer 4 , and the limited electrical conductivi...

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Problems solved by technology

[0008] see image 3 At the same time, in the flip-chip LED chip, the heat generated by the PN junction is mainly transferred to the heat-conducting substrate 82 or the outside world through the metal bumps 78, 79, because the thickness of the epitaxial structure of the flip-chip is only a few microns and it is compatible with the solder layer used for welding. 81 is close to each other. During the process of fixing the flip-chip LED chip and the heat-conducting substrate 82 and when the LED device is working under a relatively large current, the heat of welding or the heat generated by the operation of the LED chip will melt the solder layer 81, and the solder layer 81 After melting, it climbs from the metal bump of the semiconductor to the epitaxial structure, which causes a short circuit in the LED chip, resulting in the failure of the LED chip

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