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Antenna unit for inductively coupled plasma and inductively coupled plasma processing apparatus

A technology of plasma and inductive coupling, which is applied in the direction of plasma, electrical components, circuits, etc., can solve the problems that cannot be improved, and the plasma processing rate increases, so as to achieve good plasma control, ensure plasma control, and improve independence controlling effect

Active Publication Date: 2016-03-02
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, in the case of employing such an antenna unit having two loop antennas, the inner portion and the outer portion, the plasma processing rate sometimes increases at a portion where the antenna does not exist between the two loop antennas. tendency, sometimes even controlling the current in these antenna parts cannot improve the situation

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  • Antenna unit for inductively coupled plasma and inductively coupled plasma processing apparatus
  • Antenna unit for inductively coupled plasma and inductively coupled plasma processing apparatus
  • Antenna unit for inductively coupled plasma and inductively coupled plasma processing apparatus

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Embodiment Construction

[0038] Hereinafter, embodiments of the present invention will be described with reference to the drawings. figure 1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention, figure 2 It is a top view showing the antenna unit used in this inductively coupled plasma processing apparatus. This apparatus can be used, for example, to etch a metal film, an ITO film, an oxide film, etc., or to ash a resist film when forming a thin film transistor on a glass substrate for FPD. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like.

[0039] This plasma processing apparatus has a square tube-shaped airtight main body container 1 made of a conductive material, for example, aluminum whose inner wall surface has been anodized. The main body container 1 is assembled in a detachable manner, and is electrically grounded by a g...

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Abstract

PROBLEM TO BE SOLVED: To assure good plasma controllability in a plasma processing device equipped with a high frequency antenna in which a plurality of spiral antennas are provided to adjoin each other.SOLUTION: In an antenna unit 50, a high frequency antenna 13 includes a first antenna 13a which is in spiral shape and is supplied with a first high frequency power to form an induction electric field, a second antenna 13b in spiral shape which is provided concentrically with the first spiral antenna and is supplied with a second high frequency power to form an induction electric field, and a separation member which is disposed between the first antenna 13a and the second antenna 13b, in grounded state or in floating state, constituting a closed circuit, to separate a magnetic field formed by the first antenna 13a from a magnetic field formed by the second antenna 13b.

Description

technical field [0001] The present invention relates to an antenna unit for inductively coupled plasma used when inductively coupled plasma processing is performed on a substrate to be processed such as a glass substrate for manufacturing a flat panel display (FPD), and an inductively coupled plasma processing apparatus using the antenna unit . Background technique [0002] In the manufacturing process of flat panel displays (FPD) such as liquid crystal display devices (LCD), there are processes of performing plasma etching, film formation, and other plasma processing on glass substrates. To perform this plasma processing, plasma etching equipment is used. , Plasma CVD devices and other plasma processing devices. Capacitively coupled plasma processing devices have been widely used as plasma processing devices in the past, but recently, Inductively Coupled Plasma (ICP) processing devices, which have the great advantage of being able to obtain high-vacuum and high-density pla...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/46H01L21/67C23C16/505
CPCH01J37/3211
Inventor 东条利洋
Owner TOKYO ELECTRON LTD
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