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Dose detection method used for plasma immersion injection

A detection method and ion implantation technology, which is applied in the direction of circuits, discharge tubes, electrical components, etc., can solve the problems of inability to solve various charged ions, the infeasibility of ion dose detection and control, and the inability to achieve accurate detection and control.

Active Publication Date: 2013-06-19
中科九微科技有限公司
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Problems solved by technology

However, the Faraday cup detection method still cannot solve the problem of multiple charged ions, so although this method has improved compared with the bias current method, it still cannot realize the accurate detection and control of a single ion implantation dose, so it can be directly used in PIII Implanted ion dose detection and control is still not feasible

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  • Dose detection method used for plasma immersion injection
  • Dose detection method used for plasma immersion injection
  • Dose detection method used for plasma immersion injection

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Embodiment Construction

[0043] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0044] Such as figure 1 As shown, the embodiment of the present invention provides a method for detecting dose in plasma immersion implantation, the method comprising:

[0045] Step 11, determining the implanted ion species, the charge number of each ion, the ratio of each ion to the total number of ions, and the total current density of all implanted ions;

[0046] Step 12, detecting the implantation dose of a certain ion, the implantation doses of several implanted ions or the implantation doses of all ions.

[0047] The above detection is mainly realized by integration, which can detect the ion implantation dose in a certain period of time, and can also detect the change of the ion implantation amount with time.

[0048] In addition to detecting the amount of ion implantation, it is also possible to detect the implanted atomic dose of a certain element a...

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Abstract

The invention discloses a dose detection method used for plasma immersion injection and belongs to the semiconductor manufacturing technical field. The dose detection method used for the plasma immersion injection comprises the following steps: confirming injected ion species, charge number of each ion, proportion of number of each ion in number of total ion and total current density of all injected ions; and obtaining injection dose of the ions by integral operation. The dose detection method used for the plasma immersion injection can obtain injection dose of a certain ion, injection dose of a plurality of injected ions, injection dose of all the ions and injected atom dose of a kind of element, and further can obtain change of the injection dose of one ion with injection time, change of the injection dose of several injected ions with injection time, change of the injection dose of all the ions with injection time and change of the injected atom dose of an element with injection time.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a dose detection method for plasma immersion implantation. Background technique [0002] In the semiconductor process, the mainstream impurity doping technology is the beamline ion implantation technology (Ion Implantation, II), which generates plasma from the ion source, extracts the required ion components through mass spectrometry analysis, and then accelerates the ions to a certain energy and Implanted into a semiconductor substrate (such as a silicon wafer). This method requires complex mass spectrometry and scanning devices, low injection efficiency, complex structure, and extremely high cost. [0003] With the further shrinking of the feature size of integrated circuits, the ion implantation energy needs to be further reduced to below 1000 electron volts (sub-KeV). Negative effect. Therefore, a new type of plasma immersion implantation technology (Pl...

Claims

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Application Information

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IPC IPC(8): H01J37/32H01J37/244
Inventor 李超波汪明刚屈芙蓉夏洋
Owner 中科九微科技有限公司
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