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Method for preparing amorphous transparent zinc oxide film

A transparent zinc oxide, amorphous technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of high cost, easy to fall off, unable to carry out large-scale preparation, etc. Simple preparation process

Inactive Publication Date: 2013-06-12
UNIV OF SHANGHAI FOR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method has many advantages, but there are still some essential deficiencies: 1) The thin film obtained by low temperature (273K) deposition has poor adhesion and is easy to fall off; scale preparation

Method used

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  • Method for preparing amorphous transparent zinc oxide film
  • Method for preparing amorphous transparent zinc oxide film
  • Method for preparing amorphous transparent zinc oxide film

Examples

Experimental program
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Effect test

specific Embodiment 1

[0022] Specific embodiment 1, at room temperature, the magnetron reactive sputtering method was adopted, and 99.99% metal zinc was used as the cathode target in the experiment, and the anode was connected to the vacuum chamber. Install the ultrasonically cleaned substrate on the substrate fixture, and place the movable baffle between the substrate fixture and the target; close the air valves and then evacuate until the vacuum degree reaches 2×10-4Pa or more; inject an appropriate amount of argon gas; Adjust the high valve to the required working pressure; turn on the DC power supply to start sputtering for a few minutes; rotate the substrate fixture, remove the movable baffle, and start depositing the film.

[0023] The deposited metal zinc film is placed in a muffle furnace, and the temperature is raised to 400 degrees within 5 minutes in an air environment, and the film is heat-treated to obtain an amorphous transparent zinc oxide film.

specific Embodiment 2

[0024] Specific embodiment 2, at room temperature, using the magnetron reactive sputtering method, the experiment uses 99.99% metal zinc as the cathode target, and the anode is connected to the vacuum chamber. Install the ultrasonically cleaned substrate on the substrate fixture, and place the movable baffle between the substrate fixture and the target; close the air valves and then evacuate until the vacuum degree reaches 2×10-4Pa or more; inject an appropriate amount of argon gas; Adjust the high valve to the required working pressure; turn on the DC power supply to start sputtering for a few minutes; rotate the substrate fixture, remove the movable baffle, and start depositing the film.

[0025] The deposited metal zinc film is placed in a muffle furnace, and the temperature is raised to 500 degrees within 10 minutes in an air environment, and the film is heat-treated to obtain an amorphous transparent zinc oxide film.

specific Embodiment 3

[0026] Specific embodiment 3, at room temperature, the magnetron reactive sputtering method was adopted, and 99.99% metal zinc was used as the cathode target in the experiment, and the anode was connected to the vacuum chamber. Install the ultrasonically cleaned substrate on the substrate fixture, and place the movable baffle between the substrate fixture and the target; close the air valves and then evacuate until the vacuum degree reaches 2×10-4Pa or more; inject an appropriate amount of argon gas; Adjust the high valve to the required working pressure; turn on the DC power supply to start sputtering for a few minutes; rotate the substrate fixture, remove the movable baffle, and start depositing the film.

[0027] The deposited metal zinc film is placed in a muffle furnace, and the temperature is raised to 600 degrees within 20 minutes in an air environment, and the film is heat-treated to obtain an amorphous transparent zinc oxide film.

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Abstract

The invention relates to the technology of a film, and discloses a method for preparing an amorphous transparent zinc oxide film. The method comprises the following steps of: on the basis of utilizing the surface of a substrate as a basal layer, coating a uniform metal zinc film layer on the basal layer, and carrying out thermal oxidation treatment on the metal zinc film in an air environment so as to obtain the zinc oxide film; and putting the prepared metal zinc film in a muffle, rising the temperature to 400-600 DEG C in 4-25 minutes in the air environment, and carrying out heat treatment on the metal zinc film so as to obtain the amorphous transparent zinc oxide film. According to the method, the amorphous transparent zinc oxide film can be prepared through adjusting the thermal oxidation rate and temperature of the metal zinc film.

Description

technical field [0001] The invention relates to thin film technology, in particular to a preparation method of zinc oxide thin film. Background technique [0002] Wide bandgap oxide semiconductors are widely used in solar cells, flat panel displays, organic light-emitting diodes, low-emissivity glass, transparent thin film transistors, and flexible electronic devices due to their high transmittance and good electrical conductivity in the visible light range. , and its commercialization prospects are very promising. Traditional semiconductor thin films have a large number of defects such as grain boundaries, which cause many problems in device performance. For example, the stability of the device is reduced, the uniformity is deteriorated, the I-V characteristics change significantly with time, and the performance changes after bending under force, etc., all of which limit the application field of materials. Theory and experiments have proved that due to the absence of defe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/58C23C14/35C23C14/08
Inventor 洪瑞金倪争技王忠坦周瑶盛斌黄元申
Owner UNIV OF SHANGHAI FOR SCI & TECH
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