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Substrate processing equipment and cavity chamber device thereof and substrate heating method

A technology for substrate processing equipment and processing chambers, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as poor heating uniformity, and achieve the effect of uniform heating

Active Publication Date: 2013-05-08
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Poor heating uniformity due to discrete configuration of heat lamps

Method used

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  • Substrate processing equipment and cavity chamber device thereof and substrate heating method
  • Substrate processing equipment and cavity chamber device thereof and substrate heating method

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Embodiment Construction

[0030] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0031] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying Describes, but does not indicate or imply that the device or element referred...

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PUM

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Abstract

The invention discloses substrate processing equipment and a cavity chamber device thereof and a substrate heating method. The cavity chamber device comprises a cavity chamber body, a heating part, a bearing platform and an even heating plate, wherein a processing cavity chamber is limited in the cavity chamber body, the heating part is arranged on the top of the interior of the processing cavity chamber, the bearing platform is arranged in the processing cavity chamber and used for bearing a substrate, the upper surface of the bearing platform is relative to the heating part, and the even heating plate can move between a holding position and an even heating position. When the even heating plate is in the even heating position, the even heating plate is arranged between the heating part and the bearing platform, and when the even heating plate is in the holding position, the even heating plate departs between the heating part and the bearing platform. According to the cavity chamber device, thermal homogenization generated by the heating part is transmitted to the substrate through manners, such as a thermal radiation manner and a thermal convection, and therefore, even hearting on the substrate can be achieved.

Description

technical field [0001] The invention relates to a substrate processing device, a chamber device thereof and a substrate heating method. Background technique [0002] In the field of semiconductor integrated circuit manufacturing technology, the copper interconnection process generally needs to go through the following four process steps: degassing, pre-cleaning, Ta(N) deposition, and Cu deposition. The degassing process is usually carried out in a degassing chamber. The main process is to heat the substrate to about 350°C to remove water vapor and other volatile impurities on the substrate. [0003] Experiments have shown that the degassing process has high requirements on the uniformity of substrate heating. If the uniformity cannot be guaranteed, volatile impurities in some areas will not be completely removed, and severe local temperature unevenness may cause debris. In addition, for the sake of productivity, it is hoped that the substrate can reach the process temperatu...

Claims

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Application Information

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IPC IPC(8): H01L21/67H01L21/768
Inventor 赵梦欣王厚工刘旭文莉辉丁培军
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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