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Preparation method for ZnO / CdS / Cu2ZnSnS4 pn junction nanorod arrays

A technology of nanorod arrays and seed layers, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problems of small effective battery area, restricting the process of commercial application, etc., and achieve a simple and easy preparation process , good repeatability

Inactive Publication Date: 2013-04-24
DONGHUA UNIV
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

ZnO / CdS / Cu 2 ZnSnS 4 Structure is Cu 2 ZnSnS 4 The typical structure of thin-film solar cells is often prepared by complex vacuum methods, and the current effective cell area is very small, which restricts the process of its commercial application

Method used

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  • Preparation method for ZnO / CdS / Cu2ZnSnS4 pn junction nanorod arrays
  • Preparation method for ZnO / CdS / Cu2ZnSnS4 pn junction nanorod arrays
  • Preparation method for ZnO / CdS / Cu2ZnSnS4 pn junction nanorod arrays

Examples

Experimental program
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Effect test

Embodiment 1

[0033] Before the hydrothermal reaction, the glass substrate was immersed in 0.005mol / L Zn(CH 3 COO) 2 2H 2 O in ethanol solution for 1 min, removed, rinsed with ethanol solution, then annealed in air at 420°C, and naturally cooled to room temperature. After the above operation was repeated 6 times, the ZnO seed layer was deposited on the glass substrate.

[0034] 0.025mol / L Zn(NO 3 ) 2 ·6H 2 The aqueous solution of O and the aqueous solution of 0.025mol / L HMTA (hexamethylenetetramine powder) are mixed at a volume ratio of 1:1, and the reaction solution and the glass substrate covered with the ZnO seed layer are simultaneously transferred into the reactor (such as figure 1 (a) shown), hydrothermal reaction at 80 °C for 12 hours to obtain ZnO nanorod arrays.

[0035] The ZnO nanorod arrays were annealed in air at 420 °C for 20 min, and then cooled naturally to room temperature. Through the continuous ion layer adsorption and reaction method, such as figure 1 As shown ...

Embodiment 2

[0044] Before the hydrothermal reaction, the glass substrate was immersed in 0.005mol / L Zn(CH 3 COO) 2 2H 2 O in ethanol solution for 1 min, removed, rinsed with ethanol solution, then annealed in air at 420°C, and naturally cooled to room temperature. After the above operation was repeated 6 times, the ZnO seed layer was deposited on the glass substrate.

[0045] 0.025mol / L Zn(NO 3 ) 2 ·6H 2 The aqueous solution of O and the aqueous solution of 0.025mol / L HMTA (hexamethylenetetramine powder) were mixed at a volume ratio of 1:1, and the reaction solution and the glass substrate covered with the ZnO seed layer were simultaneously transferred to the reactor, and the C under hydrothermal reaction for 12 hours to obtain ZnO nanorod arrays.

[0046]The ZnO nanorod arrays were annealed in air at 420 °C for 20 min, and then cooled naturally to room temperature. Through the continuous ion layer adsorption and reaction method, that is, the ZnO nanorods are first immersed in a 0....

Embodiment 3

[0050] Before the hydrothermal reaction, the glass substrate was immersed in 0.005mol / L Zn(CH 3 COO) 2 2H 2 O in ethanol solution for 1 min, removed, rinsed with ethanol solution, then annealed in air at 420°C, and naturally cooled to room temperature. After the above operation was repeated 6 times, the ZnO seed layer was deposited on the glass substrate.

[0051] 0.025mol / L Zn(NO 3 ) 2 ·6H 2 The aqueous solution of O and the aqueous solution of 0.025mol / L HMTA (hexamethylenetetramine powder) were mixed at a volume ratio of 1:1, and the reaction solution and the glass substrate covered with the ZnO seed layer were simultaneously transferred to the reactor, and the C under hydrothermal reaction for 12 hours to obtain ZnO nanorod arrays. The ZnO nanorod arrays were annealed in air at 420 °C for 20 min, and then cooled naturally to room temperature.

[0052] Through the continuous ion layer adsorption and reaction method, that is, the ZnO nanorods are first immersed in a 0...

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Abstract

The invention relates to a preparation method for ZnO / CdS / Cu2ZnSnS4 pn junction nanorod arrays. The preparation method for the ZnO / CdS / Cu2ZnSnS4 pn junction nanorod arrays comprises (1) soaking a glass substrate in an ethanol solution of Zn (CH3COO) 2 2H2O, and acquiring a substrate of a ZnO seed layer; (2) transferring a solution of Zn (NO3) 2 6H2O and a solution of Hexamethylene Tetramine (HTMA) into a reaction still in which a seed layer substrate is placed, reacting the solution of the Zn (NO3) 2 6H2O and the solution of the HTMA, and acquiring ZnO nanorod arrays; (3) soaking the ZnO nanorod arrays into an ethanol solution of cadmium nitrate, washing the ZnO nanorod arrays, then soaking the the ZnO nanorod arrays into a methanol solution of sodium sulphide, and acquiring ZnO / CdS core / sheath nanorod arrays; (4) soaking the ZnO / CdS core / sheath nanorod arrays into anhydrous dimethyl sulfoxide solutions of Cu (CH3COO) 2 H2O, ZnCl2, SnCl2 2H2O and thiourea, and then acquiring ZnO / CdS / Cu2ZnSnS4 pn junction nanorod arrays. The preparation method for the ZnO / CdS / Cu2ZnSnS4 pn junction nanorod arrays is simple in preparation technology, adopts a solution method which facilitates mass production under ordinary pressure, and is good in repeatability.

Description

technical field [0001] The invention belongs to the field of preparation of nanorod arrays, in particular to a ZnO / CdS / Cu 2 ZnSnS 4 Preparation method of pn junction nanorod array. Background technique [0002] In recent years, one-dimensional nanostructured materials have aroused widespread interest due to their unique optical and electrical properties different from bulk materials. They not only provide an ideal system for studying the physical properties of low-dimensional objects, but also are important structural units for constructing nanoscale electronic and photonic devices. [0003] Cu 2 ZnSnS 4 It is a p-type direct bandgap semiconductor material. Its forbidden band width is about 1.5eV at room temperature. It is the optimal bandgap for single-junction solar cells and has a relatively large light absorption coefficient (>10 4 cm -1 ), is an ideal solar cell absorber material. Currently, Cu 2 ZnSnS 4 Some progress has been made in the study of nanostruct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/521Y02P70/50
Inventor 王春瑞刘旭徐靖张瑶陈效双赵旭熠莫志伟
Owner DONGHUA UNIV
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