Anti-reflecting layer with progressive refractivity and manufacture method of anti-reflecting layer

Abstract

The invention provides an anti-reflecting layer with progressive refractivity and a manufacture method of the anti-reflecting layer so as to eliminate reflecting action of light on interfaces. The anti-reflecting layer with the progressive refractivity is characterized in that the anti-reflecting layer is formed by depositing a first material and a second material, and the refractivity (neff) of the anti-reflecting layer is changed progressively along with the thickness between refractivity (n1) of the first material and refractivity (n2) of the second material, wherein the refractivity of each thickness of the anti-reflecting layer is accordant with an effective media law and satisfies the equation that neff={n12f+n22(1-f)}1 / 2, and the f refers to filling ratio of the first material of the anti-reflecting layer.

Description

technical field [0001] The invention relates to an anti-reflection layer and its manufacturing method, in particular to an anti-reflection layer with progressive refractive index and its manufacturing method. Background technique [0002] In recent years, light-emitting diodes (LEDs) have gradually replaced traditional incandescent or fluorescent bulbs as a lighting source. Due to the high brightness and high power characteristics of gallium nitride (GaN) blue light diodes, GaN-based semiconductors have been widely used in the industry as the main material for white LED light. With the rapid development of technology, the luminous efficiency (Internal Quantum Efficiency) of the internal light-emitting layer of GaN material has been refined to more than 90%, while the external light-emitting efficiency (External Quantum Efficiency) of the LED surface layer is less than 10%. That is to say, only part of the light from the LED can shine out, and most of the light that reaches ...

AI Technical Summary

Problems solved by technology

The disadvantage of this 1 / 4 wavelength anti-reflection method is that it is difficult to obtain or manufacture materials with a suitable refractive index, and the thickness of the anti-reflection layer is closely related to the wavelength of light. Once the thickness is determined, the anti-reflection layer can only target a certain wavelength. For the light of other colors and wavelengths, the anti-light reflection function is reduced or invalidated, and the effect of Omnidirection or Broadband cannot be achieved.

In addition, unlike the long-distance light-picking of the camera lens, the LED light source is very close to its upper surface. When the light source is emitted in all directions, the 1 / 4 wavelength anti-reflection function will lose its effect on non-vertical incident light.

Images