Basic module-based mask main body graph optimization method

A technology of basic modules and optimization methods, applied in the direction of originals for photomechanical processing, photolithography of patterned surfaces, optics, etc., can solve problems such as destroying the optimality of optimized masks

Active Publication Date: 2013-03-27
BEIJING INSTITUTE OF TECHNOLOGYGY
View PDF5 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the MRC method will destroy the optimality of the optimized mask, and the mask pattern processed by the MRC method is not the optimal solution of the mask optimization problem.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Basic module-based mask main body graph optimization method
  • Basic module-based mask main body graph optimization method
  • Basic module-based mask main body graph optimization method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0183] Figure 6 is a schematic diagram of the initial mask and its corresponding photoresist imaging, and its critical dimension is 45nm. 601 is the target pattern, which is also the initial mask pattern. White represents the opening part, and the transmittance is 1. Black represents the light blocking part, and the transmittance is 0. 602 is the photoresist in the photolithography system after using 601 as the mask. Imaging, the imaging error is 2816 (where the imaging error is defined as the value of the objective function), and the average CD error is 34.7nm, where the average CD error is the absolute value of the difference between the critical dimension and the ideal critical dimension of the imaging everywhere in the actual photoresist average of.

[0184] Figure 7 Schematic illustration of a mask master pattern optimized for the method of the present invention and its corresponding imaging in photoresist. 701 is a mask body pattern optimized based on the method of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
refractive indexaaaaaaaaaa
Login to view more

Abstract

The invention provides a basic module-based mask main body graph optimization method. The method comprises the following steps of: constructing a mask main body graph into a plurality of superposed basic modules the single side size of which is greater than the threshold, namely the mask main body graph can be shown convolution of the basic modules and the coefficient matrix showing the positions of the basic modules; constructing the optimization target function F into squaring the Euler distance between the target graph and an image in photoresist corresponding to the current mask main body graph; and then based on an ABBE vector imaging model, optimizing the mask main body graph by adopting an improved conjugate gradient method. According to the method, the single side size of any part of the optimized mask main body graph is greater than a preset threshold can be automatically ensured in the mask optimization process. In addition, according to the method, only the mask main body graph is optimized without introduction of any auxiliary graphs, so that no auxiliary graphs excessively close to the main body graph can be produced. Therefore, the method can effectively improve the manufacturability of the optimized mask on the premise of improving the imaging quality of a photoetching system.

Description

technical field [0001] The invention relates to an optimization method of a mask main body pattern based on a basic module, and belongs to the technical field of photolithographic resolution enhancement. Background technique [0002] The current large-scale integrated circuits are generally manufactured using photolithography systems. The lithography system is mainly divided into four parts: illumination system (including light source and condenser), mask, projection system and wafer. The mask pattern consists of mask main feature (MF for short) and mask auxiliary pattern (sub- resolution assist feature, referred to as SRAF) consists of two parts. The light emitted by the light source is focused by the condenser and then enters the mask, and the opening part of the mask transmits light; after passing through the mask, the light is incident on the wafer coated with photoresist through the projection system, so that the mask pattern is copied on the wafer. [0003] The curre...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36
Inventor 马旭李艳秋宋之洋
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap