Crosslinked composition

A composition and cross-linking technology, applied in the direction of nanotechnology, electrical components, nanotechnology, etc., can solve the problems of inability to obtain high photoelectric effect, low conductivity of organic semiconductors, and low photoelectric conversion rate

Inactive Publication Date: 2013-03-20
DAICEL CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with inorganic semiconductors, electrons and holes in organic semiconductors are strongly bound, so the photoelectric conversion rate is extremely low
Furthermore, a combination of an organic semiconductor and an inorganic semiconductor has also been proposed, but as mentioned above, the conductivity of the organic semiconductor is low, so a high photoelectric effect cannot be obtained.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0332] (1) Preparation of composition (coating composition)

[0333] Put 16.2mg of 1,3,5-triformylbenzene (manufactured by Nard Laboratories Co., Ltd.) and 29.0mg of tris(4-aminophenyl)amine in a 6ml sample bottle, and dissolve in N,N-dimethylethyl Amide 860mg. The solution was filtered with a filter having a pore size of 0.2 μm to prepare a composition (coating composition).

[0334] (2) Production of organic semiconductor film

[0335] Using the composition obtained in the above step (1), a thin film was formed by spin coating on a substrate, and then heat-treated at 300°C for 1 hour in a nitrogen atmosphere to obtain an organic semiconductor film (hereinafter referred to as BTA- TAPA).

[0336] (3) Structure of organic semiconductor film

[0337] (3-1) Solubility relative to organic solvents

[0338] A silicon wafer (or glass plate) is used as the base material, and the BTA-TAPA film is produced by the method (2) above. Since the film was insoluble in N,N-dimethylacetamide, it was...

Embodiment 2

[0351] (1) Preparation of composition (coating composition)

[0352] Put 16.2mg of 1,3,5-triformylbenzene (manufactured by Nard Laboratories Co., Ltd.) and 29.4mg of 2,7-diaminofluorene in a 6ml sample bottle and dissolve in 1400mg of N,N-dimethylacetamide . The solution was filtered with a filter having a pore size of 0.2 μm to prepare a composition (coating composition).

[0353] (2) Production of organic semiconductor film

[0354] Using the composition obtained in the above step (1), an organic semiconductor film (hereinafter referred to as BTA-DAF) was obtained by the same method as in Example 1.

[0355] (3) Structure of organic semiconductor film

[0356] (3-1) Solubility relative to organic solvents

[0357] The BTA-DAF film was produced by the same method as in Example 1. The film was insoluble in N,N-dimethylacetamide, and therefore, it was confirmed that a three-dimensional network structure was formed.

[0358] (3-2) Band gap

[0359] The UV-Vis spectrum of the BTA-DAF film ...

Embodiment 3

[0367] (1) Preparation of composition (coating composition)

[0368] Put 16.2mg of 1,3,5-triformylbenzene (manufactured by Nard Laboratories Co., Ltd.) and 34.8mg of 1,3-diaminopyrene in a 6ml sample bottle and dissolve in 1650mg of N,N-dimethylacetamide . The solution was filtered with a filter having a pore size of 0.2 μm to prepare a composition (coating composition).

[0369] (2) Production of organic semiconductor film

[0370] Using the composition obtained in the above step (1), an organic semiconductor film (hereinafter referred to as BTA-13DAPy) was obtained by the same method as in Example 1.

[0371] (3) Structure of organic semiconductor film

[0372] (3-1) Solubility relative to organic solvents

[0373] The BTA-13DAPy film was produced by the same method as in Example 1. The film was insoluble in N,N-dimethylacetamide, and therefore, it was confirmed that a three-dimensional network structure was formed.

[0374] (3-2) Band gap

[0375] The UV-Vis spectrum of the BTA-13DAP...

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Abstract

Disclosed is a composition (for example, a coating composition) which can be used to form an organic semiconductor having superior conductivity, solvent resistance, heat resistance and durability. Also disclosed is an organic semiconductor which is formed using the composition. The composition comprises: an aromatic polycarbonyl compound having a carbonyl group as a reactive site; and at least one aromatic reaction component selected from an aromatic polyamine having an amine group as a reactive site, and an aromatic heterocyclic compound having a plurality of unmodified alpha-carbon positions as reactive sites, said a-carbon positions being adjacent to heterocyclic heteroatoms. If the aromatic reaction component is an aromatic heterocyclic compound, the aromatic polycarbonyl compound is an aromatic polyaldehyde compound. An organic semiconductor having a three-dimensional crosslinked structure is formed using a composition in which at least one component among the aromatic polycarbonyl compound and the aromatic reaction component has at least three reactive sites.

Description

Technical field [0001] The present invention relates to a crosslinkable composition having excellent conductivity, solvent resistance, heat resistance, durability, etc. (especially a composition useful for the formation of organic semiconductors (e.g., coating composition)) and the composition The formation of organic semiconductors, etc. Background technique [0002] Organic semiconductors are known as low molecular type and high molecular type. For example, as a low-molecular-weight organic semiconductor component, a tertiary amine compound represented by the following formula (1), etc., is disclosed in JP 2004-346082 A (Patent Document 1), which describes that by having at least One or more groups having the chemical structure of the electron-donating part and the chemical structure of the electron-attracting part increase cohesion and can control molecular orientation. [0003] [0004] JP 2008-283104 A (Patent Document 2) discloses an organic semiconductor material represent...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G73/00C08G16/02H01L29/786H01L51/05H01L51/30H01L51/40
CPCH01L51/0035B82Y10/00H01L51/0036H01L51/0047H01L51/5048C09B69/108C09B69/102C09B69/106H01L51/0039C09B69/105H01L51/0054H01L51/0043H01L51/4253C09B69/109C09B69/101H10K85/115H10K85/111H10K85/215H10K85/151H10K85/113H10K85/622H10K30/30H10K50/14H10K10/484
Inventor 福井和寿舩木克典延谷真实
Owner DAICEL CHEM IND LTD
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