Method for reducing mask board splicing errors

Abstract

The invention discloses a method for reducing mask board splicing errors. According to the result of a graph formed by etching an exposed graph after repeated exposure on a splicing area of two adjacent mask boards, the structural compensation is carried on the exposed graph on the splicing area on the mask boards reversely. By utilizing the method, the distortion treatment to the exposed graph at the splicing area caused by repeated exposure and process deviation can be eliminated through compensation design of the mask boards, the consistency of an etched graph at the splicing area and an etched graph at a non-splicing area is ensured, and the yield of products is increased.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for reducing mask splicing errors. Background technique [0002] As the panel size of TFT-LCD continues to increase, various TFT-LCD manufacturers have invested in high-generation production lines in order to produce larger-sized panels. Due to the increase in panel size, it is necessary to use several smaller-sized masks for multiple step-by-step exposures to form larger-sized panels, and then realize the functions of large-sized panels through certain designs and arrangements. [0003] Using mask splicing, multiple step-by-step exposure technology can produce large-sized panels, but when mask splicing, two adjacent masks have the same exposure pattern area, forming a splicing area, such as figure 1 As shown, the first reticle 1 and the second reticle 2 are spliced, and the adjacent edge thereof is the splicing area 3, and the exposure pattern corresponding to the spl...

AI Technical Summary

Problems solved by technology

[0003] Using mask splicing, multiple step-by-step exposure technology can produce large-sized panels, but when mask splicing, two adjacent masks have the same exposure pattern area, forming a splicing area, such as figure 1 As shown, the first reticle 1 and the second reticle 2 are spliced, and the adjacent edge thereof is the splicing area 3, and the exposure pattern corresponding to the splicing area 3 has one exposure more than one exposure, so the splicing The graphics in area 3 will be different from those in non-stitched areas, such as figure 2 The spliced ​​exposed area due to repeated exposure shown in Figure A is narrowed after etching and image 3 The pattern A of the spliced ​​exposure area shown in the figure is widened after etching due to repeated exposure; also due to the process deviation in the splicing process, the pattern of the spliced ​​area and the pattern of the non-spliced ​​area will also be different, such as Figure 4 The situation in which pattern A is broken after etching in the spliced ​​exposed area due to the deviation when the mask is docked as shown in

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