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Method for cleaning polished sapphire substrate wafer

A technology for sapphire substrates and wafers, applied in the direction of liquid cleaning methods, cleaning methods and utensils, chemical instruments and methods, etc., can solve the problems of manual cleaning cleaning stability, low success rate, etc., to avoid difficult cleaning, Small environmental impact and cost reduction effect

Inactive Publication Date: 2013-03-13
江苏吉星新材料有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the entire sapphire substrate processing process, cleaning after chemical mechanical polishing (CMP) is particularly important. However, although the cleaning methods in the entire industry are different, the success rate of one-time cleaning is low. All cleaning is done manually and the cleaning stability is poor.

Method used

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Embodiment Construction

[0013] The present invention will be further described below through specific embodiments.

[0014] In a preferred embodiment, the cleaning method of the sapphire substrate wafer of the present invention comprises the following steps in turn:

[0015] a, Under normal room temperature conditions, the sapphire substrate wafer after CMP polishing is completely immersed in the configured SM-007 acid solution, and cleaned for 15-30 minutes;

[0016] b. Under normal room temperature, soak the wafer in pure water and ultrasonically clean it for 5-10 minutes;

[0017] c. Soak the sapphire substrate in SP-2200 alkali solution at 45°C, ultrasonically and simultaneously throw it up and down for 15-20 minutes;

[0018] d. Under normal room temperature, soak the wafer in pure water and ultrasonically and throw it up and down for 1-5 minutes at the same time;

[0019] e, soak the sapphire substrate wafer in DP-020 alkali solution at 45°C, ultrasonically and simultaneously throw it up and ...

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Abstract

The invention provides a method for cleaning a polished sapphire substrate wafer and belongs to the technical field of crystal processing and manufacturing. By the method, manual cleaning can be replaced completely and the one-step cleaning passing rate reaches the advanced level in the industry. The method comprises the following steps: soaking the polished sapphire substrate wafer into SM-007 acidic liquid at room temperature and cleaning for 15 to 30 minutes; soaking the sapphire substrate wafer into pure water at room temperature and ultrasonically cleaning for 5 to 10 minutes; soaking the sapphire substrate wafer into SP-2200 alkaline liquid and DP-020 alkaline liquid respectively at the temperature of 45 DEG C, performing ultrasonic treatment and throwing up and down at the same time, cleaning in the SP-2200 alkaline liquid for 15 to 20 minutes and cleaning in the DP-020 alkaline liquid for 10 to 15 minutes; between the two-time cleaning steps and at room temperature, soaking the sapphire substrate wafer into pure water, performing ultrasonic treatment and cleaning for 1 to 5 minutes by throwing up and down at the same time; and performing quick dump rinse (QDR) cleaning on the wafer and spin-drying.

Description

technical field [0001] The invention belongs to the technical field of crystal processing and production, and in particular relates to a cleaning method after polishing a sapphire substrate wafer. Background technique [0002] For the production of LED chips, the choice of substrate material is the primary issue. According to the current selection of machines on the market and the technical parameter requirements of the LED chip itself, among many materials, sapphire substrate material has become the first material in terms of cost and process feasibility. At present, high-purity aluminum oxide particles are converted into LED products. In this process, dozens of processes such as crystal growth, rod extraction, slicing, annealing, etc. are processed. After each process, the sapphire lining The bottom wafer has been processed and polluted once, so cleaning during processing is a very important step, and it is also an important indicator to transfer to the next process to de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B08B3/12B08B3/08
Inventor 杨华王禄宝
Owner 江苏吉星新材料有限公司
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