Double-cantilever-beam MEMS (Micro-electromechanical System) device based on inversion process and forming method thereof

Abstract

The invention discloses a double-cantilever-beam MEMS (Micro-electromechanical System) device based on an inversion process and a forming method thereof. The method comprises the following steps of: providing a substrate; forming a transition layer, a bottom layer electrode and an interlaminar medium layer on the substrate in sequence; forming an upper electrode layer on the interlaminar medium layer; etching the upper electrode layer and the interlaminar medium layer to form an opening for exposing a part of the bottom layer electrode, and forming a first upper layer electrode and a second upper layer electrode by using the upper electrode layer; forming a two-dimensional material film on the first upper layer electrode and the second upper layer electrode, wherein the two-dimensional material film crosses the opening; and forming a first metal contact and a second metal contact above the two ends of the two-dimensional material film respectively, wherein the first metal contact is connected with at least one part of the first upper layer electrode, and the second metal contact is connected with at least one part of the second upper layer electrode. The method disclosed by the invention has the advantages of mature process, easiness in implementing, small device contact resistance, stability and reliability.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a double-arm beam MEMS device based on an inversion process and a forming method thereof. Background technique [0002] In recent years, the research on the mechanical properties of graphene thin film materials has become a research hotspot. The usual way to study the mechanical properties of such micro-sized materials is to design double-arm beam MEMS devices and study the mechanical forms of micro-sized materials such as vibration, deformation, and twist under electric fields, and explore their potential applications based on mechanical properties. [0003] Existing graphene film double-arm beam MEMS devices such as figure 1 As shown, its formation method is: form SiO by thermal oxidation on Si substrate 100' 2 layer 200' and an opening; a graphene film 600' is transferred above the opening; and two electrodes 301' and 302' are subsequently fabricated. In the prior ar...

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Problems solved by technology

In the prior art scheme, there are following difficulties: it is difficult to directly form the metal electrodes 301' and 302' on the graphene 600', and the contact resistance of the device finally obtained is relatively large; after forming the graphene film 600', it is still necessary to process the electrodes. Multiple process steps can easily pollute or even damage the graphene film 600', which is not good for protecting its excellent electrical properties, and it is difficult to guarantee the process accuracy

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