First packaged and then etched packaging structure with single chip normally installed and base islands buried and preparation method of structure

Abstract

The invention relates to a first packaged and then etched packaging structure with a single chip normally installed and base islands buried and a preparation method of the structure. The structure comprises base islands (1) and pins (2), wherein a chip (4) is arranged on the fronts of the base islands (1); the front face of the chip (4) and the front faces of the pins (2) are connected by metal wires (5); plastic package materials (6) are arranged in the surrounding regions of the base islands (1) and the pins (2) and outside the chip (4) and the metal wires (5); small holes (7) are formed on the surfaces of the plastic package materials (6) on the lower parts of the pins (2); the small holes (7) are communicated with the backs of the pins (2); metal balls (9) are arranged in the small holes (7); and the metal balls (9) are contacted with the backs of the pins (2). The packaging structure and the preparation method have the following beneficial effects that the preparation cost is reduced; the safety and reliability of the packaging body are improved; environmental pollution is reduced; and design and preparation of high-density circuits are truly achieved.

Description

technical field [0001] The invention relates to a single-chip front-mounting first packaging and then etching base island embedded packaging structure and a manufacturing method thereof. It belongs to the technical field of semiconductor packaging. Background technique [0002] The manufacturing process flow of the traditional high-density substrate package structure is as follows: [0003] Step 1, see Figure 38 , take a substrate made of glass fiber material, [0004] Step two, see Figure 39 , opening holes at desired locations on the fiberglass substrate, [0005] Step three, see Figure 40 , coated with a layer of copper foil on the back of the glass fiber substrate, [0006] Step 4, see Figure 41 , fill the conductive material in the position where the glass fiber substrate is punched, [0007] Step five, see Figure 42 , coated with a layer of copper foil on the front of the glass fiber substrate, [0008] Step six, see Figure 43 , coated with a photoresis...

AI Technical Summary

Problems solved by technology

[0019] 3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the safety capability or reliability level of reliability;

[0020] 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (etching factor: minimum The best manufacturing capability is that the etching gap is approximately equal to the thickness of the object being etched, see Figure 50 ), so it is impossible to truly design and manufacture high-density circuits;

[0022]6. Also because the entire substrate material is made of glass fiber, the thickness of the glass fiber layer is obviously increased by 100~150μm, and it cannot be really ultra-thin encapsulation;

[0023]7. Due to the large difference in material characteristics (expansion coefficient) of the traditional glass fiber plus copper foil technology, it is easy to cause stress deformation in the harsh environment process, directly Affects the accuracy of component loading and the adhesion and reliability of components and substrates

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