Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Dual-interface smart card chip working state management method and device

A dual-interface smart card and working state technology, which is applied in the field of smart cards, can solve the problem that the performance of the dual-interface smart card chip is limited by the working state of the SRAM.

Active Publication Date: 2015-09-30
DATANG MICROELECTRONICS TECH CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a method and device for managing the working state of a dual-interface smart card chip, which solves the problem that the performance of the dual-interface smart card chip is limited by the working state of the SRAM

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dual-interface smart card chip working state management method and device
  • Dual-interface smart card chip working state management method and device
  • Dual-interface smart card chip working state management method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The shortcoming of prior art is: if will reduce the average current of SRAM and peak current, will reduce the operating speed of SRAM; Power consumption on SRAM. The two restrict each other, so that the working speed of SRAM cannot reach high speed, and its peak current cannot be reduced to a relatively low level, thus restricting the performance of the dual-interface smart card chip.

[0033] In order to solve the above problems, the present invention provides a method for managing the working state of a dual-interface smart card chip. Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined arbitrarily with each other.

[0034] Firstly, the embodiments of the present invention will be described with reference to the accompanying drawings.

[0035] The embodime...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method and a device for working condition management on a dual-interface smart card chip, relates to the field of smart cards, and solves the problem that the performance of the dual-interface smart card chip is limited by the working condition of a SRAM (Static Random Access Memory). The method comprises the following steps that: the dual-interface smart card chip receives an indication signal, wherein the indication signal indicates the work mode of the SRAM of the dual-interface smart card chip; and the dual-interface smart card chip starts the work mode indicated by the indication signal. The technical scheme provided by the invention is suitable for the dual-interface smart card with a contact type port and a non-contact type port, and realizes switching control on the work mode of the SRAM.

Description

technical field [0001] The invention relates to the field of smart cards, in particular to a method and device for managing the working state of a dual-interface smart card chip. Background technique [0002] In the dual-interface smart card chip, when the contact interface works, the SRAM is required to run at high speed, and the data read and write speed is fast. Such a static random access memory (SRAM) is very large in terms of average current and peak current; while the non-contact interface works alone At this time, since the energy of the entire chip is coupled through the antenna, the obtained energy is limited. It is required that the average current and the peak current of the SRAM should not be large to meet the requirements of low power consumption, but the requirements for speed are moderate. There is a contradiction between high speed and low power consumption, so the high speed and low current of SRAM in the dual interface card chip cannot be satisfied at the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06
Inventor 张祥杉李紫金
Owner DATANG MICROELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products