Multi-parameter online monitoring and optimizing control device and method of polycrystalline silicon reduction furnace

Abstract

The invention discloses a multi-parameter online monitoring and optimizing control device and method of a polycrystalline silicon reduction furnace. The device comprises a multi-parameter infrared monitoring probe, an infrared image processing and vision measuring module and a process optimizing control module, wherein the multi-parameter infrared monitoring probe obtains an infrared image of a silicon rod in the furnace; the infrared image is collected by a data collecting module and is converted into a digital image; the digital image is analyzed and processed by an image processing module, and the diameter and the growing rate of the silicon rod are obtained through a vision measuring technology; a colorimetric temperature measurement method is used for measuring temperature distribution on the surface of the silicon rod and obtained data is accessed to a display through a user interface; and an optimizing control module is established through measured data obtained by analyzing, and different polycrystalline silicon reduction furnace types are combined to carry out closed ring optimizing control. According to the multi-parameter online monitoring and optimizing control device and method, a silicon rod growing process can be optimally controlled; and the device and the method are of great importance of saving energy and reducing consumption, improving the production efficiency, guaranteeing the production safety and reducing the labor intensity.

Description

technical field [0001] The invention relates to the field of silicon reduction furnace production, in particular to a polysilicon reduction furnace multi-parameter online monitoring and optimization control device and method. technical background [0002] Polysilicon is the basic raw material of the electronics industry and the solar energy industry, and is widely used in semiconductor chips, high-performance sensors, optical fibers, solar panels, etc. By 2010, the global polysilicon output reached 120,000 tons, while China accounted for 50% of the total output, with an output value of nearly RMB 40 billion. It is estimated that in 2011, the global polysilicon output will reach 160,000 tons, and the proportion of China will increase to more than 60% of the total output. [0003] The temperature distribution on the surface of silicon rods in the reduction furnace, rod diameter, growth rate and other parameters are the key links to improve the growth quality of silicon rods. ...

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Problems solved by technology

[0005] Up to now, in the actual production of more than a thousand polysilicon reduction furnaces across the country, the open-loop control mode based on the preset experience curve is adopted. The measurement is roughly estimated based on the workers' work experience and visual inspection. Obviously, this method has a certain degree of subjectivity and chance

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