Chemical vapor deposition reaction chamber apparatus and chemical vapor deposition equipment having same

Abstract

The invention provides a chemical vapor deposition reaction chamber apparatus, comprising a chamber body limitedly provided with a reaction chamber therein; an upper accompany wafer which is fixed in the reaction chamber and is provided with at least one detection through hole; a pallet which is positioned below the upper accompany wafer; a rotating mechanism which is connected with the pallet and is used for driving the pallet to rotate; and a detector which is disposed out of the chamber body and corresponds to at least one detection through hole on the upper accompany wafer. The invention also provides chemical vapor deposition equipment. According to the chemical vapor deposition reaction chamber apparatus, detection difficulty can be reduced; and detection precision can be improved. With the chemical vapor deposition equipment, detections of temperature and film-forming thickness can be more accurate; and detection time is saved. Furthermore, the chemical vapor deposition reaction chamber apparatus and the chemical vapor deposition equipment are simple in realization and low in cost.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a chemical vapor deposition reaction chamber device and chemical vapor deposition equipment provided therewith. Background technique [0002] Metal organic compound chemical vapor deposition (MOCVD) is the key equipment in the LED production process, and its equipment cost accounts for about 70% of the investment cost of the entire production line. The growth of quantum wells is the most typical. [0003] The core part of MOCVD equipment is the reaction chamber, and its process control belongs to the thermal film forming process. The uniform distribution of thermal field and flow field in the reaction chamber is an important factor determining the success or failure of the epitaxy process. The control and monitoring of temperature distribution is a key technology of this equipment, because temperature accuracy, uniformity and repeatability are one of the key factors for...

AI Technical Summary

Problems solved by technology

[0005] The disadvantage of the prior art is that for the current reaction chamber, since the upper companion piece is rotating at a high speed, it is very difficult to measure the temperature of the lower tray of the upper companion piece or the film thickness of the substrate through the upper companion piece. and the detection is very inaccurate

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