Method for preparing ultra-thin silicon wafer based on SLiM-Cut (Stress induced Lift-off Method-Cut) technology

A silicon wafer, ultra-thin technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high cost, high annealing temperature, and high production cost, and achieve good integrity, low annealing temperature, and surface flatness Good results

Inactive Publication Date: 2014-12-31
HENAN UNIV OF SCI & TECH
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Problems solved by technology

In the method published by Dross et al., more expensive silver paste and aluminum paste are used, and the annealing temperature is higher, so the production cost of this method is still high

Method used

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Embodiment Construction

[0018] A method for preparing ultra-thin silicon wafers based on SLiM-Cut technology, comprising the following steps:

[0019] (1), the size is 5×5 cm 2 silicon wafer as the substrate.

[0020] (2) Place the silicon substrate horizontally, and print a layer of bronze paste with a thickness of 20 μm on its upper surface by screen printing.

[0021] (3) Then place the silicon substrate printed with the bronze paste layer under the condition of 200° C. to dry the bronze paste layer to form a bronze layer.

[0022] (4) Put the silicon substrate with the dried bronze layer into the rapid annealing furnace, heat it to 720 ℃, keep it warm for 10 seconds, then stop the fire, and cool it by air.

[0023] (5) Take out the silicon substrate cooled in step (4), place the side with the bronze layer facing up, and print zinc with a thickness of 40 μm on the surface of the bronze layer on the silicon substrate by screen printing. The slurry layer is then dried under the condition of ...

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Abstract

The invention discloses a method for preparing an ultra-thin silicon wafer based on an SLiM-Cut (Stress induced Lift-off Method-Cut) technology. The method comprises the following steps of: printing a bronze slurry layer with thickness of 20 mm on a silicon substrate, drying and then placing in a quick annealing furnace, heating to 720 DEG C and then preserving heat for 10 seconds, stopping heating and cooling; taking out, then printing a zinc slurry layer with thickness of 40 mm on the surface of the bronze layer on the silicon substrate, drying, then placing in the quick annealing furnace, heating to 720 DEG C and then preserving heat for 10 seconds, stopping heating and cooling to strip a silicon layer which is positioned on the surface of the silicon substrate and is combined with the bronze layer from the silicon substrate; and placing in chemical etching solution, corroding and dissolving the zinc layer and the bronze layer, taking the remaining silicon layer out, cleaning and air-drying to obtain the ultra-thin silicon wafer with thickness of 30-50 mm. According to the scheme, the annealing temperature is low, energy consumption is reduced, bronze and zinc are used as silkscreen printed layers and are both conventional materials, large-scale production is facilitated, and the cost is favorably reduced.

Description

technical field [0001] The invention relates to a method for preparing silicon wafers, in particular to a method for preparing ultra-thin silicon wafers based on SLiM-Cut technology. Background technique [0002] Silicon wafers are the basis of modern microelectronics technology and solar photoelectric conversion technology, and are the most expensive part of solar photovoltaic cell technology. In recent years, although the price of silicon raw materials has dropped significantly, reducing the manufacturing cost of silicon wafers is still crucial to improving the competitiveness of solar energy against traditional energy sources. [0003] At present, the solar silicon wafer cutting technology mainly uses the wire saw cutting method invented by Dr. Charles Hauser of Switzerland in the 1980s. The core of the modern wire saw is the ultra-fine high-strength cutting wire used to complete the cutting action with the cooperation of abrasive slurry. The diameter of the cutting wire...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
Inventor 李国岭周锋子李立本李航王丹丹李新忠
Owner HENAN UNIV OF SCI & TECH
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