Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Charging method and device of straight-pull silicon single crystals

A technology of Czochralski silicon and charging, which is applied in the direction of single crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problems of easy contamination of polycrystalline silicon raw materials, poor safety of charging operation, and high labor intensity of charging, etc. Achieve the effect of improving production efficiency and utilization rate of crystal pulling furnace, reducing labor intensity and reducing production cost

Inactive Publication Date: 2012-09-05
TDG HLDG CO LTD
View PDF11 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a charging method for Czochralski silicon single crystal, to solve the problem that the polysilicon raw material is easily polluted during the charging process of the current Czochralski silicon single crystal, the labor intensity of charging through the heater is high, and the charging consumption is high. The problem of long time and poor safety of loading operation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Charging method and device of straight-pull silicon single crystals
  • Charging method and device of straight-pull silicon single crystals
  • Charging method and device of straight-pull silicon single crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A kind of charging method of Czochralski silicon single crystal adopts such as figure 1 and figure 2 The device shown includes the steps of preparation before charging, charging, closing the lid and vacuuming, loading into the crystal pulling furnace, removing the lid of the quartz crucible and closing the furnace, specifically:

[0029] Step 1: Preparation before charging: move 100kg polysilicon material, a 22-inch quartz crucible 2, 23.4g master alloy, charging car 1 and air pump into the 100-class clean air shower room in sequence;

[0030] Step 2: Loading: While the operators are dismantling the furnace to clean the heat field, another group of operators wear clean clothes and enter the clean air shower room, unpack the quartz crucible 2, and put it on the charging cart 1 Then, according to the process requirements, all the polysilicon material and master alloy are loaded into the quartz crucible 2;

[0031] Step 3: Closing the lid and vacuuming: After wiping the...

Embodiment 2

[0035] A kind of charging method of Czochralski silicon single crystal adopts such as figure 1 and figure 2 The process of the shown device includes preparation before charging, charging, closing the cover and vacuuming, loading into the crystal pulling furnace, removing the cover of the quartz crucible and closing the furnace:

[0036] Step 1: Preparation before charging: move 150kg polysilicon material, a 24-inch quartz crucible 2, 35g master alloy, charging car 1 and air pump into the 100-class clean air shower room in sequence;

[0037] Step 2: Loading: While the operators are dismantling the furnace to clean the heat field, another group of operators wear clean clothes and enter the clean air shower room, unpack the quartz crucible 2, and put it on the charging cart 1 Then, according to the technological requirements, all the polysilicon material and the master alloy are loaded into the quartz crucible 2;

[0038] Step 3: Closing the lid and vacuuming: After wiping the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a charging method and device of straight-pull silicon single crystals. The method comprises the following steps: preparation before charging, charging, cover closing, vacuumizing, charging into a crystal pulling furnace, dismounting of a quartz crucible cover, and furnace closing. The device comprises a quartz crucible, a quartz crucible cover, an O-ring seal and a charging car. When charging, the quartz crucible is arranged on the charging car, the O-ring seal is put on the opening of the quartz crucible after charging the silicon single crystals and mother alloy, the quartz crucible cover is closed, a suction pump is connected for vacuumizing, and the quartz crucible is suspended. The straight-pull silicon single crystal charging technique can be independently carried out in a clean room, thereby avoiding pollution in the polysilicon material charging process, improving the work environment of charging and lowering the labor intensity of charging; the charging technique, furnace dismounting and thermal field cleaning can be performed at the same time, thereby greatly shortening the furnace mounting and dismounting time, enhancing the production efficiency and crystal pulling furnace utilization ratio, and lowering the production cost of the silicon single crystals.

Description

technical field [0001] The invention belongs to the technical field of silicon single crystal growth in the solar photovoltaic industry, and specifically relates to a charging method in the process of manufacturing silicon single crystals by the Czochralski method, and also relates to a device used in the charging method of the Czochralski silicon single crystal . Background technique [0002] In recent years, Czochralski silicon single crystal has developed rapidly in the field of solar photovoltaics due to its near-perfect structure and performance advantages. At present, various technologies for manufacturing silicon single crystals by Czochralski method are becoming more and more perfect and becoming mature. For example, the Czochralski silicon crystal process disclosed in Chinese patents CN102220634A and CN102242397A has recorded a technical solution for improving the quality of silicon crystal and its production efficiency. [0003] Generally speaking, the preparatio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B15/00C30B29/06
Inventor 庞邦永
Owner TDG HLDG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com