Chemical mechanical lapping method

Abstract

The invention provides a chemical mechanical lapping method which comprises the following steps of: providing a semiconductor substrate formed with a dielectric layer; carrying out a first time of lapping to the dielectric layer, wherein organism residue is generated on the surface of the dielectric layer after the first time of lapping; carrying out a second time of lapping to the dielectric layer by adopting an alkaline reagent to remove the organism residue on the surface of the dielectric layer. According to the invention, the alkaline reagent is adopted to remove the organism residue on the surface of the dielectric layer after main lapping process is completed to a wafer and before cleaning of the wafer by adopting the subsequent process in the existing chemical mechanical lapping process; and compared with the prior art, the chemical mechanical lapping method provided by the invention has the advantages that the effect for removing the organism residue is more obvious, thereby improving the quality and performance of final products.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a chemical mechanical polishing method. Background technique [0002] In the field of semiconductor technology, chemical mechanical polishing technology (CMP technology) has both mechanical polishing and chemical polishing, which can flatten the entire wafer surface for subsequent thin film deposition and other processes. During the CMP process, the wafer to be ground is pressed against the grinding pad by the grinding head and the wafer is driven to rotate, while the grinding pad rotates in the opposite direction. When grinding, the required grinding slurry is added between the wafer and the grinding pad through the grinding slurry delivery device; then, with the high-speed direction between the grinding pad and the wafer to be ground, the wafer to be ground The reaction products on the surface are continuously peeled off, and the reaction products are carried away with ...

AI Technical Summary

Problems solved by technology

However, after using the cleaning method to clean the wafer, it is found that the number of some larger pollutant particles is still large, and this method is not effective in removing organic residues on the surface of the wafer, and the expected cleaning effect cannot be achieved.

[0005] Therefore, in view of the above problems, it is necessary to provide a method that can effectively remove organic residues on the wafer surface, but there is no better solution at present

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