Method for forming metal microstructure

Abstract

The invention discloses a method for forming a metal microstructure, which is applied to a process of manufacturing a microstructure component. By the method for forming the metal microstructure, a second metal is not required to be electroplated around the periphery of the metal and is not required to be etched in the process of forming a stereoscopic metal microstructure of the microstructure component, the residual stress caused by electroplating can be reduced, residual stress does not exist between metal layers, a substrate to which the metal is attached does not deform, and a subsequent process of manufacturing the microstructure component is not influenced; and moreover, because the second metal is not required to be etched, the problem that an etching solution penetrates each layer of interfaces is solved, the adhesive force on each layer cannot be reduced, and the function of the microstructure component is not influenced.

Description

[0001] This application is a divisional application of the application file with the application number 200910163069.5. The filing date of the original application is August 21, 2009, the application number is 200910163069.5, and the title of the invention is "Metal Microstructure Formation Method". technical field [0002] The invention relates to a method for forming a microstructure, in particular to a method for forming a metal microstructure, which is applied to the manufacturing process of microstructure components, can reduce the residual stress caused by electroplating, there will be no residual stress between metal layers, and the metal attached The substrate will not be deformed and will not affect the subsequent manufacturing process of the microstructure component. Background technique [0003] For the current MEMS technology, although MEMS has the advantages of miniaturization, batch production, and can provide many high-performance components, the goal it pursue...

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Problems solved by technology

[0010] Yet the shortcoming of the U.S. patent of above-mentioned US 5,190,637 is: 1. Need electroplating second kind of metal again, if the area occupied by second kind of metal is quite large, must reduce the residual stress that electroplating causes as far as possible, otherwise easily make adhesion The substrate of the main metal is deformed, making it impossible to carry out the subsequent manufacturing process; 2. There is residual stress between each layer of the main metal; and, 3. Although the etching solution is adjusted as much as possible to have a higher selectivity ratio between the main metal and the second metal , but the etchant will still seep into the interface of each layer, resulting in a decrease in the adhesion of each layer, which in turn affects the reliability of the microstructure components

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