Cleaning method and cleaning and drying equipment for improving cleanness of wafer

Abstract

The invention provides a cleaning and drying method for improving the cleanness of a wafer. The method comprises the following steps of: supplying a cleaning table, and horizontally putting the wafer on the cleaning table; arranging a cleaning sprayer above the circle center of the wafer, wherein the liquid outlet direction of the cleaning sprayer is inclined with a vertical direction of the wafer; starting the wafer to rotate horizontally, and starting the cleaning sprayer to move horizontally; starting a cleaning process, wherein the cleaning sprayer sprays out cleaning solution to the surface of the wafer, and the cleaning sprayer horizontally moves to a position deflected away from the circle center of the wafer and stops moving; and finishing cleaning, wherein the cleaning sprayer stops supplying the cleaning solution, and the wafer continues to rotate horizontally to be dried. The invention also provides cleaning and drying equipment. According to the method and the equipment, the cleanness of the wafer can be improved greatly; the problem about residues of liquid impurities and granular impurities is solved; the equipment is easy and convenient to improve; the cost is low; and the performance, the yield and the reliability of a wafer product are improved, and the process cost is reduced.

Description

technical field [0001] The invention relates to an integrated circuit manufacturing method, in particular to a cleaning and drying method and cleaning and drying equipment capable of improving the cleanliness of wafers. Background technique [0002] In the manufacturing process of integrated circuits, the cleanliness and surface state of the wafer surface are crucial to the high-quality silicon device process. If the surface quality does not meet the requirements, no matter how well other process steps are controlled, it is impossible to obtain high-quality semiconductor devices. Removing contamination from the wafer surface is no longer an ultimate requirement. [0003] So far, there are many cleaning methods, mainly physical cleaning and chemical cleaning. Among them, the chemical cleaning method is more commonly used, but sometimes a little liquid remains in the drying after cleaning, which affects the cleanliness of the wafer surface. [0004] figure 1 For the cleani...

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Problems solved by technology

Among them, the chemical cleaning method is more commonly used, but sometimes a little liquid remains in the drying after cleaning, which affects the cleanliness of the wafer surface

[0004] figure 1 For the cleaning and drying method of wafer in the prior art, as figure 1 As shown, in the common wafer cleaning and drying method in the prior art, the wafer 10 is placed on the cleaning table 30, and the cleaning nozzle 20 is fixed vertically above the center 11 of the wafer 10. During the cleaning process, the wafer 10 itself Rotate, the cleaning nozzle 20 sprays the cleaning liquid onto the surface of the wafer 10, and the wafer 10 rotates itself to bring the liquid to other positions of the wafer 10. The method can ensure that the liquid is evenly distributed. However, since the cleaning nozzle 20 is fixed on the wafer 10 Above the center 11 of the circle 10, the cleaning liquid at the center 11 of the wafer 10 is distributed the most, and the centrifugal force at the center 11 of the wafer 10 is the lowest, causing the liquid residual impurities on the surface of the wafer 10, especially at the center 11, to be unable to be completely removed. problems, which in turn affect wafer cleanliness, yield and reliability

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