Electric tunable grating coupler

Abstract

The invention discloses an electric tunable grating coupler. The electric tunable grating coupler comprises an SOI (Silicon On Insulator) substrate, an oblique incidence grating coupler, a P+ mixing area, an N+ mixing area, a pair of electrodes, a mode converter, a single mode ridge waveguide and a substrate gold reflecting mirror, wherein the SOI substrate comprises a silicon substrate, an oxideburying layer and a top silicon layer positioned at the upper position of the SOI substrate; the oblique incidence grating coupler is positioned on the top silicon layer positioned on the SOI substrate; the P+ mixing area is positioned in a panel area at one side of the oblique incidence grating coupler; the N+ mixing area is positioned in the panel area at the other side of the oblique incidencegrating coupler; the electrodes are positioned at the upper positions of the P+ mixing area and the N+ mixing area, are respectively connected with the P+ mixing area and the N+ mixing area through metal contact through holes and are used for loading electric signals; one end of the mode converter is provided with a wide waveguide, the mode converter is positioned at one end of the oblique incidence grating coupler, and the end of the mode converter, which is provided with the wide waveguide, is coupled with one end of the oblique incidence grating coupler; the single mode ridge waveguide andthe oblique incidence grating coupler are respectively positioned at two ends of the mode converter; and the substrate gold reflecting mirror is embedded in the silicon substrate positioned at the bottom part of the SOI substrate and is positioned below the oblique incidence grating coupler and the oxide burying layer.

Description

technical field [0001] The invention relates to silicon-based optoelectronic technology, in particular to an SOI-based electrically tunable grating coupler. Background technique [0002] Microelectronics technology and optical fiber communication technology are the two cornerstones of human information society. In the past half century, with the development of integrated circuits, silicon-based materials and device technology have become surprisingly mature, and with the continuous shrinking of process feature sizes, the integration of integrated circuits has been developing rapidly in accordance with Moore's law. The higher integration of chips brings not only an increase in the number of transistors, but also an increase in chip functions and processing speed. For example, the latest 8-core microprocessor Nehalem-EX of Intel's 45nm process has 2.3 billion transistors. However, as feature sizes shrink and integration levels continue to increase, the limitations of microel...

AI Technical Summary

Problems solved by technology

Unfortunately, the efficiency of ordinary uniform gratings often has an upper limit, and it is difficult to greatly improve it only by changing the grating parameters. Moreover, due to the influence of process errors and imperfections, the testing results of grating devices are often quite different from the simulation results. Deviations, such as a shift in the center wavelength or a drop in efficiency

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