Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

CdS single crystal nanowire solar battery and preparation method of the same

A technology of solar cells and single crystal nanometers, applied in the field of solar cells, can solve the problems of low photoelectron injection efficiency and transmission and collection efficiency, and achieve the effects of being conducive to commercial production and application, convenient preparation, and high injection efficiency

Inactive Publication Date: 2012-07-04
TIANJIN UNIV
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] The purpose of the present invention is to overcome the shortcomings of low photoelectron injection efficiency and transmission and collection efficiency of traditional dye-sensitized solar cells (DSSCs) and quantum dot-sensitized solar cells, and provide a combination of sensitizer and electron transport material 1. CdS single crystal nanowire solar cells with strong photoelectron injection and transmission capabilities, no defects, less electron loss during transmission, and high collection and utilization efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CdS single crystal nanowire solar battery and preparation method of the same
  • CdS single crystal nanowire solar battery and preparation method of the same
  • CdS single crystal nanowire solar battery and preparation method of the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Mix 25mL of deionized water, 2.5mL of 0.12M / L cadmium chloride (CdCl 2 ), 10mL of 0.20M / L ammonium chloride (NH 4 Cl), 15mL of 2M / L ammonia water (NH 3 ·H 2 (2) and 2.5mL of 0.6M / L thiourea were added to the same beaker, the FTO glass sheet was vertically submerged into the reaction solution, and the pH value of the whole reaction system was controlled between 10 and 11, heated in a water bath, and the temperature was constant at 80 ℃. After reacting for 15 minutes, the FTO glass piece was taken out, washed with deionized water, dried under nitrogen flow, annealed at 400°C for 1 hour, and cooled in a furnace. The seed layer is prepared.

[0038] Weigh 1.25 g of Cd(NO 3 ) 2 4H 2 O and 0.925 grams of thiourea were dissolved in 40 mL of ethylenediamine solution, and magnetically stirred for about 15 min until the reactant was completely dissolved; the FTO conductive glass with the CdS seed layer was put into a hydrothermal reaction kettle with the above mixed solution...

Embodiment 2

[0047] Mix 25 mL of deionized water, 625 μL of 0.12M / L cadmium chloride (CdCl 2 ), 10mL of 0.20M / L ammonium chloride (NH 4 Cl), 15mL of 2M / L ammonia water (NH 3 ·H 2 (2) and 625 μL of 0.6M / L thiourea were added into the same beaker, the reaction time was 40min, and all other steps were completely the same as in Example 1.

[0048] The particle size of the seed layer prepared under this condition becomes smaller, about 20nm, and the filling factor of the prepared battery is 1.5 times that of Example 1, which can reach 61%, indicating that the utilization efficiency of the entire battery system for photoelectrons is very high .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
band gapaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a CdS single crystal nanowire solar battery, which is composed of a photo anode, an electrolyte and a counter electrode, namely a Pt electrode. The photo anode is a CdS single crystal nanowire vertically grown on a conductive glass substrate, and the photo anode is formed by combination of a sensitizing agent and an electronic transmission material; and the generation and the transmission of photoelectrons are integrated in the CdS single crystal nanowire photo anode. According to the invention, the existing method of forming the CdS nanowire by solution phase synthesis is improved, and a simple and convenient method for growing the CdS single crystal nanowire in situ on a conductive glass FTO is provided. The battery provided by the invention has simple principle and is designed smartly, raw materials for synthesis are cheap, and the cost performance of the whole battery is high, which is beneficial for large-scale commercial production and application.

Description

technical field [0001] The invention relates to a solar cell, in particular to a CdS single crystal nanowire (SCNWs) solar cell and a preparation method thereof. Background technique [0002] With the rapid development of modern industry, the demand for energy is increasing day by day, which leads to an energy crisis; on the other hand, a large amount of CO is released in the use of conventional energy 2 Gas, leading to the global "greenhouse effect". For this reason, all countries are trying to get rid of the dependence on conventional energy and accelerate the development of renewable energy. [0003] Available renewable energy mainly includes wind energy, water energy, tidal energy, nuclear energy, geothermal energy and solar energy. Compared with wind energy, water energy, etc., solar energy, which accounts for more than 99% of the total energy of the earth, is a clean energy with extremely abundant reserves. Optimal renewable energy. Therefore, strengthening the uti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/042H01G9/20H01M14/00H01L51/46H01L51/42H01L51/48
CPCY02E10/549
Inventor 杜希文宋俊国凌涛
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com