Monitoring semiconductor substrate test structures and test methods for integrated passive devices

Abstract

The invention provides a semiconductor substrate testing structure and testing method for monitoring integrated passive devices. The test structure for monitoring a semiconductor substrate for integrating passive devices according to the present invention includes: the two ends of the semiconductor circuit on the semiconductor substrate that are connected to the two ends of the inductance, capacitance and resistance tester are separated by a specific distance. The first metal wire and the second metal wire, wherein a test signal is added to one end of the LCR tester to obtain a C-V curve, and the doping concentration of the semiconductor substrate is determined through the C-V curve. According to the test structure for monitoring semiconductor substrates used for integrated passive devices, the C-V curves reflect the characteristics of metal-oxide-substrate capacitors, and the characteristics of metal-oxide-substrate capacitors are as the semiconductor substrate is doped. The C-V curve reflects the doping concentration of the semiconductor substrate. Furthermore, the change of the resistivity of the semiconductor substrate can be judged by the doping concentration of the semiconductor substrate.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, more specifically, the invention relates to a semiconductor substrate test structure for monitoring integrated passive devices and a method for monitoring the semiconductor substrate test for integrated passive devices. Background technique [0002] In the semiconductor chip manufacturing process, for high-frequency (for example, not less than 2.4G) applications, it is necessary to integrate some passive devices in the circuit in many cases. [0003] For this process of integrating passive devices for high-frequency applications, a high-resistance semiconductor substrate can provide high Q and high inductance. Therefore, it is desirable to use high-resistance semiconductor substrates for processes integrating passive devices for high-frequency applications. [0004] However, the resistivity of semiconductor substrates usually used in the manufacture of semiconductor devices is r...

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Problems solved by technology

[0004] However, the resistivity of semiconductor substrates usually used in the manufacture of semiconductor devices is relatively small (≤50Ωcm), so that high-frequency signals (such as radio frequency signals) will cause losses in the circuit; this is because the magnetic field penetrating the semiconductor substrate will cause losses and reduce the value of inductance and Q factor

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