SnS nanocrystalline thin film preparation method

Abstract

The invention discloses a SnS nanocrystalline thin film preparation method, which adopts an ink method. The preparation method comprises two steps: (1) preparation of SnS nanocrystalline ink including preparing a Sn-source precursor solution and a S-source precursor solution, respectively adding the S-source precursor solution and high-temperature injecting the Sn-source precursor solution into a three-neck flask, refluxing in the N2 atmosphere to prepare a SnS nanocrystalline solution, centrifugally cleaning the nanocrystalline solution with absolute ethanol, and ultrasonically dispersing in absolute ethanol to obtain the ink; (2) thin film preparation including soaking a glass substrate in the nanocrystalline ink, and preparing the thin film by dip-coating method. The preparation method is simple, and can control the formation and growth speed of crystal nucleus. Additionally, the preparation method is easy in controlling stoichiometric ratio, and is suitable for preparation of multicomponent thin film.

Description

technical field [0001] The invention relates to a solar cell, in particular to a SnS nanocrystalline semiconductor thin film of a solar cell light absorbing layer material. Background technique [0002] With the development of economy and social progress, human beings' demand for energy is increasing day by day, and traditional non-renewable resources such as coal, oil, and natural gas are becoming increasingly depleted, making energy issues a major issue facing the world. As a renewable green and clean energy, solar energy has been widely valued by countries all over the world, and the development and application of solar cells has also become the focus of research in various countries. Organic compound thin-film solar cells have the advantages of relatively low cost and high theoretical photoelectric conversion efficiency compared with traditional solar cells, that is, silicon solar cells, and have broad prospects in application research. As an important part of solar cel...

AI Technical Summary

Problems solved by technology

However, the electrochemical deposition method is difficult to prepare ideal thin film materials with complex composition, and the formation and growth rate of crystal nuclei on the surface of the substrate cannot be controlled. Most of the obtained compound semiconductor thin films are polycrystalline or amorphous.

The SILAR method cannot be industrialized due to its cumbersome steps

Chemical water bath deposition is generally limited to the deposition of sulfides and a small amount of simple oxides, and reports on multi-component compounds are rare

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