Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Boron nitride-graphene composite material, preparation method and purpose thereof

A composite material and graphene technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as unsatisfactory electrical conductivity, and achieve the effect of improving electrical conductivity

Inactive Publication Date: 2012-06-13
金虎
View PDF2 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this hexagonal structure boron nitride film / graphene film composite still cannot meet the requirements of conductivity in some cases.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Boron nitride-graphene composite material, preparation method and purpose thereof
  • Boron nitride-graphene composite material, preparation method and purpose thereof
  • Boron nitride-graphene composite material, preparation method and purpose thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] Two square boron nitride films (thickness 3nm, side length 5cm) and a single-layer graphene film of the same shape and size (thickness 0.35nm) were grown on the copper foil by the CVD method described in the text. PMMA glue was sprayed and cured on one surface of each of them, and the copper foil was exposed by plasma etching with oxygen on the other side, and the copper foil was etched away by immersing in a hydrochloric acid (20% by weight) solution. Then one of the boron nitride films is cleaned and put into the water. The boron nitride film is flat on the surface of the water due to surface tension, and it is picked up from the water with a glass substrate to make it flat and tightly attached to the surface of the water without gaps. The surface of the substrate; then the single-layer graphene film is cleaned and laid flat on the surface of the water, and the glass substrate coated with the boron nitride film is used to pick it up from the water and make it tightly a...

Embodiment 2

[0075] The boron nitride film / graphene film / boron nitride film composite material was prepared in the same manner as in Example 1, except that the thicknesses of the boron nitride film and the graphene film were 5 nm and 1 nm, respectively.

[0076] The plane resistance of the composite material was measured by the plane resistance measurement method with the aforementioned plane resistance measuring instrument, and the results are shown in Table 1 below.

Embodiment 3

[0078] The boron nitride film / graphene film / boron nitride film composite material was prepared in the same manner as in Example 1, except that the thicknesses of the boron nitride film and the graphene film were 0.5 nm and 3.5 nm, respectively.

[0079] The plane resistance of the composite material was measured by the plane resistance measurement method with the aforementioned plane resistance measuring instrument, and the results are shown in Table 1 below.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a boron nitride-graphene composite material which sequentially comprises a boron nitride film (8), a graphene film (9) and the boron nitride film (10). By using the composite material, under the condition that a carrier density is not increased, conductivity of the grapheme can be substantially increased. In addition, the invention also relates to a preparation method of the composite material and a purpose of preparing a transparent electrode.

Description

technical field [0001] The invention relates to a boron nitride-graphene composite material, its preparation method and its application. Background technique [0002] Graphene has excellent electrical properties, is cheap and easy to obtain, and is environmentally friendly, so it shows attractive prospects in the field of transparent electrodes. However, after the graphene film is transferred to certain substrates (e.g., quartz, glass, polyethylene terephthalate (PET) plastic), its electrical properties decrease significantly, which limits the use of graphene films in Applications in certain transparent electrodes such as electronic paper and light-emitting diodes. Recent studies have shown that when graphene is placed on a hexagonal boron nitride (h-BN) substrate, its electrical conductivity (more specifically, carrier mobility) is significantly improved. However, this hexagonal structure boron nitride film / graphene film composite still cannot meet the requirement of elec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/42H01L51/54
Inventor 金虎彭鹏
Owner 金虎
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com