Laser annealing method and laser annealing device adopting laser auxiliary heating

Abstract

The invention provides a laser annealing method and a laser annealing device adopting the laser auxiliary heating within the technical range of laser annealing in a semiconductor production process. The laser annealing method mainly adopts two lasers, wherein one laser is used for laser auxiliary heating to enable the surface of a semiconductor to be activated to make preparations for laser annealing, while the other one is used for laser annealing to the semiconductor. Two laser beams pass through a related optical system to be coaxially outputted and irradiated onto a scanning mirror. A scanning optical system is assembled on a precision mechanical component and is controlled electrically. An electric control system adopts a galvanometer control structure, and when the output voltage ranges from negative 10 V to positive 10 V, the mechanical structure deflects by 20 degrees below zero to 20 degrees correspondingly, so that the control to the input voltage is converted into the precision control to the turning angle of the mechanical structure. An optical lens is fixed on the mechanical structure, and the irradiation position of the laser beams is adjusted through controlling the turning angle of the scanning optical system, so that the laser beams are scanned in the horizontal direction and the vertical direction.

Description

technical field [0001] The invention relates to a semiconductor manufacturing equipment and method, in particular to a laser annealing method and device using laser assisted heating. Background technique [0002] Laser technology has achieved good application results in semiconductor production. Diffusion and impurity doping are performed using a laser process, the purpose of which is to obtain an abrupt junction that is not deposited deeply and to establish an ohmic contact. Laser annealing can electrically activate the implanted impurities and eliminate the radiation defects of the structure. It is also found that the laser can crystallize the silicon epitaxy and absorb the gas in the semiconductor structure. Another advantage of the laser annealing process is that no other products are generated during the annealing process. [0003] Based on most of the current laser annealing methods, a preheating process is added before the laser annealing process of the semiconducto...

AI Technical Summary

Problems solved by technology

The disadvantage of this laser annealing method is that it cannot perform laser annealing on the specified area of ​​the semiconductor surface, which is not convenient and flexible enough.

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