Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for improving overloading response speed of silicon capacitive pressure sensor

A technology of pressure sensor and overload response, which is applied in the direction of fluid pressure measurement, instrument, and measurement force using capacitance changes, and can solve the problems of improving the overload response speed of silicon capacitance pressure sensors, etc., with remarkable effect and simple process Effect

Inactive Publication Date: 2012-05-09
SHENYANG ACAD OF INSTR SCI
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

According to the retrieval of related literature and patent reports at home and abroad, there is no report on the method of improving the overload response speed of silicon capacitive pressure sensors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving overloading response speed of silicon capacitive pressure sensor
  • Method for improving overloading response speed of silicon capacitive pressure sensor
  • Method for improving overloading response speed of silicon capacitive pressure sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The method to improve the overload response speed of the silicon capacitive pressure sensor is to use the electrostatic sealing process to seal the capacitive three-electrode plate into a sandwich structure, such as figure 1 As shown, the upper glass fixed plate 1 and the lower glass fixed plate 3 have the same structure, and there is silicone oil filling between the silicon sensitive chip movable plate 2 and the upper and lower glass fixed plates 1 and 3 for pressure Transmission; it is characterized in that there is a square center island 5 on the movable plate 2 of the silicon sensitive chip sandwiched between the upper glass fixed plate 1 and the lower glass fixed plate 3, and the oil guide groove structure is designed on both sides of the center island 5 , and use MEMS processing technology to make linear oil guide groove 7, see figure 2 , image 3 , at the opposite inner surfaces and central holes of the upper and lower glass fixed pole plates 1 and 3, a metal s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for improving an overload response speed of a silicon capacitive pressure sensor, which includes: sealing an upper glass fixed polar plate, a movable silicon center polar plate, and a lower glass fixed polar plate into a capacitance three-polar plate structure by using a static electricity sealing process, and is characterized by: employing an MEMS process technology, respectively producing line type guide oil groove structure on upper and lower surfaces of a center island of the silicon center polar plate of the silicon capacitive pressure sensor, arranging geometric-shaped metal electrodes matched with the line type guide oil groove structure and made by a sputtering technology on center surfaces of upper and lower glass fixed polar plates, and the glass fixed polar plate centers having guide pressure leading electrode holes. When the movable center polar plate is over pressure and is attached to the electrodes of the fixed polar plates, an oil-guide channel of the line type guide oil groove structure is still kept unblocked, thereby effectively reducing resilience damp after overpressure and attachment of the center island of the silicon center polar plate, and improving the response speed to pressure after the silicon capacitive pressure sensor is over pressure.

Description

technical field [0001] The invention relates to the technical field of sensor manufacturing, and relates to a design and implementation method for improving the pressure response speed of a silicon capacitance pressure sensor after overloading. Background technique [0002] Silicon capacitive pressure sensor is a new type of structural pressure sensor. The core sensitive device is made of single crystal silicon material, which is made by the fusion technology of microelectronics and micromachining. Due to the own advantages of silicon elastomer material and the principle of structural force sensitive sensor Compared with the previous silicon piezoresistive and metal capacitive sensors, silicon capacitive sensors have more obvious advantages in measurement accuracy, stability, temperature performance, etc., and become an important research direction for future sensor development. The core sensitive device of the silicon capacitive sensor converts the external pressure signal ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01L9/12G01L1/14
Inventor 李颖张治国庞士信刘沁张娜刘剑周磊
Owner SHENYANG ACAD OF INSTR SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com