Semiconductor wet etching device and method

Abstract

The invention belongs to the field of manufacturing of semiconductor devices and particularly discloses a semiconductor wet etching device and a semiconductor wet etching method. The device is characterized in that: an equipment bracket is provided with a transmission device, a basket bracket and a tank body for accommodating an etching solution in a matched mode, wherein the transmission device drives the basket bracket to reciprocate in the tank body. Due to a mode of swinging back and forth, a basket for accommodating wafers has a larger motion track, so that liquidity of the etching solution is improved, impact kinetic energy of the etching solution on an etching body is provided by controlling back-and-forth swinging amplitude and frequency when liquidity of a chemical etching solution is improved, and a longitudinal etching rate of the etching solution can be effectively improved; therefore, the etching uniformity is improved, and the residue of the etching body is reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor device manufacturing, in particular to a semiconductor wet etching device and method. Background technique [0002] The current mainstream wet etching method adopts the method of immersing the wafer in the etching solution. For some difficult-to-etch substances, it cannot give a better etching effect on the silicon wafer, especially for thicker films and Mixed material films often exhibit residue and inhomogeneous corrosion. Contents of the invention [0003] Aiming at the problems existing in the prior art, the object of the present invention is to provide a technical solution of a semiconductor wet etching device and method. [0004] The semiconductor wet etching device includes an equipment support, which is characterized in that a transmission device, a flower basket support and a tank body containing corrosive liquid are arranged on the equipment support, and the transmission device drives the...

AI Technical Summary

Problems solved by technology

[0002] The current mainstream wet etching method adopts the method of immersing the wafer in the etching solution. For some difficult-to-etch substances, it cannot give a better etching effect on the silicon wafer, especially for thicker films and Residue and uneven etch are often seen in mixed material films

Images