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Storage Elements and Storage Devices

A storage element and storage layer technology, applied in electrical elements, information storage, static memory, etc., can solve the problems of flowing, difficult current, thin address wiring, etc., to reduce power consumption, reduce power consumption, The effect of reducing the write current

Active Publication Date: 2016-09-07
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] However, as the components constituting the MRAM are miniaturized, the address wiring becomes thinner, making it difficult for sufficient current to flow

Method used

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  • Storage Elements and Storage Devices

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0070] Hereinafter, embodiments of the present invention will be described in the following order.

[0071] 1. Outline of the memory element of the embodiment

[0072] 2. Structure of Embodiment

[0073] 3. Experiment

[0074] 1. Outline of the memory element of the embodiment

[0075] First, an overview of a storage device according to an embodiment of the present invention will be described.

[0076] According to an embodiment of the present invention, recording of information is performed by reversing the magnetization direction of the storage layer of the storage element by the spin injection described above.

[0077] The storage layer is formed of a magnetic material such as a ferromagnetic layer, and holds information by the magnetization state (magnetization direction) of the magnetic material.

[0078] It will be described in detail later, but the memory element has a layer structure (an example of which is in figure 2 ), and includes a memory layer 17 and a magn...

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PUM

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Abstract

The present invention discloses a memory element and a memory device, the memory element comprising: a memory layer having a magnetization perpendicular to a film surface; a magnetization fixed layer having a magnetization perpendicular to the film surface; and an insulating layer disposed on the memory layer and the magnetization fixed between layers, in which spin-polarized electrons are injected in the lamination direction of the layer structure, so that the magnetization direction of the storage layer is changed and recording of information is performed, and the magnitude of the effective diamagnetic field received by the storage layer is smaller than the saturation magnetization amount of the storage layer, For the insulating layer and the layer on the other side in contact with the storage layer on the side opposite to the insulating layer, at least the interface in contact with the storage layer is formed of an oxide film.

Description

technical field [0001] The present invention relates to a memory element including a memory layer storing a magnetization state of a ferromagnetic layer as information and a magnetization fixed layer in which a magnetization direction is fixed, and a memory device having a memory element, and the memory layer is changed by causing a current to flow therethrough the magnetization direction. Background technique [0002] In information devices such as computers, high-density DRAMs operating at high speeds have been widely used as random access memories. [0003] However, DRAM is a volatile memory in which information is erased when power is turned off, and thus a nonvolatile memory in which information is not erased is desired. [0004] Furthermore, as a candidate of the nonvolatile memory, a magnetic random access memory (MRAM) in which information is recorded by magnetization of a magnetic material has attracted attention, and thus has been developed. [0005] The MRAM cau...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16H01L43/08
CPCG11C11/161H10B61/22H10N50/85H10N50/10H10N50/80G11C11/16
Inventor 肥后丰细见政功大森广之别所和宏山根一阳内田裕行
Owner SONY CORP
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