Laser assisted device alteration using two-photon absorption

Abstract

A Two-Photon Laser Assisted Device Alteration technique is presented. Fault localization is investigated by exploiting the non-linear two-photon absorption mechanism to induce LADA effects. Femtosecond laser pulses of wavelength having photon energy lower than the silicon band gap are directed at the area of interest, while the DUT is stimulated with test vectors. The laser pulses are synchronized to the DUT stimulation, so that switching timing can be altered using the two-photon absorption effect.

Description

[0001] related application [0002] This application claims priority to US Provisional Patent Application No. 61 / 381023 filed on September 8, 2010, the entire disclosure of which is incorporated herein by reference. technical field [0003] The present invention relates to the field of laser-based defect localization analysis of integrated circuits, and, more particularly, to the field of design debugging and / or defect analysis of integrated circuits using laser irradiation. Background technique [0004] Laser Assisted Device Alteration (LADA) is a technique applied to the test and debug phase of chip design. It is especially used to isolate critical performance-limiting nodes in complex, defect-free integrated circuits. It has also been found that the LADA effect is widely used to locate process defects because it tends to tune the characteristics of transistors in the same way as process defects. [0005] LADA technology is based on the ability of continuous wave (CW) la...

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Problems solved by technology

However, it requires higher peak power and pulsed beams so that the probability of two photons arriving at exactly the same time is greatly increased

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