Method for manufacturing structure of semiconductor device

Abstract

The invention provides a method for manufacturing the structure of a semiconductor device, which comprises the steps of: providing a front-end device layer structure, wherein the front-end device layer structure is provided with liners and grid electrode structures positioned above the liners, the liner at two sides of each grid electrode structure is internally provided with active regions, the surface of the liner is sequentially provided with an etching stopping layer, an interlayer medium layer and a patterned mask film layer, the patterned mask film layer is provided with a first opening which correspondingly needs to manufacture a bit line contact hole, and the surface of the interlayer medium layer is exposed out of the first opening; firstly etching the interlayer medium layers under the first openings by the means that the patterned mask film layers are taken as mask films, and secondly etching the residual interlayer medium layers, so that the interlayer medium layers are wholly removed, and the active regions and the etching stopping layers above the grid electrode structures are exposed; and thirdly etching the exposed etching stopping layers, so that the exposed etching stopping layers are wholly removed, and the bit line contact holes are formed. The method guarantees the contact holes to have ideal appearance outlines.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for manufacturing a semiconductor device structure. Background technique [0002] With the rapid development of ultra-large-scale integrated circuits, the integration of chips is getting higher and higher, and the size of device structures is getting smaller and smaller. The various effects caused by the high density and small size of device structures have an increasingly prominent. Taking the process of forming contact holes by etching as an example, when making contact holes on the same substrate, the size, shape and distribution density of each contact hole may be different due to different specific functions. Results may vary. In the manufacturing process of semiconductor integrated circuits, the formation of contact holes is a technically important part. The contact hole is the channel connecting the front transistor unit and the back metal wiring. It is ...

AI Technical Summary

Problems solved by technology

In the actual metal line layer interconnection, when the bit line contact hole of the above-mentioned semiconductor device structure is used for subsequent processes, short circuits are prone to occur

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