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Reworking method for chemical mechanical lapping process

A chemical-mechanical and grinding technology, applied in grinding devices, grinding machine tools, manufacturing tools, etc., can solve the problems of declining yield of semiconductor devices and easy contamination of wafers, and achieve the effect of improving yield and preventing pollution.

Active Publication Date: 2012-03-14
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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  • Abstract
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  • Claims
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Problems solved by technology

[0008] The present invention provides a rework method of chemical mechanical polishing process to solve the problem that in the existing rework method of chemical mechanical polishing process, the wafers on the first grinding platform and the second grinding platform are easily polluted, which leads to poor semiconductor devices. rate drop problem

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  • Reworking method for chemical mechanical lapping process
  • Reworking method for chemical mechanical lapping process
  • Reworking method for chemical mechanical lapping process

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Embodiment Construction

[0028]According to the description of the background technology, in the existing chemical mechanical polishing rework method, when the first wafer on the third grinding platform is subjected to grinding treatment, the second wafer and the second wafer waiting on the second grinding platform and the first grinding platform are not processed. Any isolation process for the three wafers makes it very likely that various pollutants on the chemical mechanical polishing platform will splash onto the surface of the second wafer and the third wafer, thereby contaminating the second wafer and the third wafer, resulting in a decrease in the yield of semiconductor devices. Therefore, the present invention provides a kind of rework method of chemical mechanical polishing process, when this method sprays polishing fluid to the surface of the first wafer on the third grinding platform to remove the defect of the first wafer surface, also wait on the second grinding platform. The surface of th...

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Abstract

The invention discloses a reworking method for a chemical mechanical lapping process. The method comprises the following steps of: providing chemical mechanical lapping equipment, wherein the chemical mechanical lapping equipment comprises a first lapping platform, a second lapping platform and a third lapping platform, a first chip is arranged on the third lapping platform, a second chip is arranged above the second lapping platform, and a third chip is arranged above the first lapping platform; and spraying lapping liquid on the surface of the first chip to remove the defect on the surface of the first chip, and blowing gas or deionized water on the surfaces of the second chip and the third chip respectively. By the reworking method, the chips waited on the second lapping platform and the first lapping platform can be prevented from being polluted, and the yield of a semiconductor device is improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a rework method of a chemical mechanical polishing process. Background technique [0002] With the rapid development of ultra-large-scale integrated circuits, the manufacturing process of integrated circuits has become more and more complex and sophisticated. In order to improve integration and reduce manufacturing costs, the size of semiconductor devices is decreasing day by day, and it is difficult for planar wiring to meet the high-density distribution of semiconductor devices. Requirements, only multi-layer wiring technology can be used to further increase the integration density of semiconductor devices. Due to the deposition process of multi-layer interconnection or relatively large filling depth, the wafer surface is excessively undulating, which causes difficulties in focusing the photolithography process, weakens the ability to control the line width, and ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/04B24B37/27H01L21/304
Inventor 邓武锋刘俊良
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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