P-i-n type InGaN solar cell possessing superlattice structure
A p-i-n, solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem that the conversion efficiency cannot be significantly improved.
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Embodiment 1
[0035] The p-i-n type InGaN solar cell containing the superlattice structure of the present invention comprises: sapphire substrate, AlN nucleation layer 11, GaN buffer layer 12, n-GaN layer 13, InGaN / GaN superlattice 14 and p-GaN layer 15 . Among them, the AlN nucleation layer 11 is grown at high temperature; the GaN buffer layer 12 is an unintentionally doped layer; the thickness of the n-GaN13 layer is 50nm, and the electron concentration is 1×10 18 / cm 3 ; The InGaN / GaN superlattice 14 has 8 periods, each period is composed of a well layer InGaN18 with a thickness of 8nm and a barrier layer GaN19 with a thickness of 3nm, both InGaN and GaN are intrinsic thin films, and the carrier concentration is 1× 10 16 / cm 3 , the In composition in the well layer InGaN is 15%; the thickness of the p-GaN layer 15 is 50nm, and the hole concentration is 1×10 17 / cm 3 . Grid Ni / Au ohmic electrodes 16 are distributed on the surface of p-GaN layer 15 , each electrode has a width of 1 μ...
Embodiment 2
[0037] The p-i-n type InGaN solar cell containing the superlattice structure of the present invention comprises, from bottom to top, a silicon substrate, an AlN nucleation layer 11, a GaN buffer layer 12, an n-GaN layer 13, an InGaN / GaN superlattice 14 and p-GaN layer 15 . Among them, the AlN nucleation layer 11 is grown at high temperature; the GaN buffer layer 12 is an unintentionally doped layer; the thickness of the n-GaN13 layer is 50nm, and the electron concentration is 1×10 18 / cm 3 ; The InGaN / GaN superlattice 14 has 14 periods, each period is composed of a well layer InGaN18 with a thickness of 14nm and a barrier layer GaN19 with a thickness of 5nm, both InGaN and GaN are intrinsic thin films, and the carrier concentration is 6× 10 16 / cm 3, the In composition in the well layer InGaN is 40%; the thickness of the p-GaN layer 15 is 50nm, and the hole concentration is 1×10 17 / cm 3 . The surface of the p-GaN layer 15 is distributed with grid-shaped ITO electrodes 1...
Embodiment 3
[0039] The p-i-n type InGaN solar cell containing the superlattice structure of the present invention comprises: sapphire substrate, AlN nucleation layer 11, GaN buffer layer 12, n-GaN layer 13, InGaN / GaN superlattice 14 and p-GaN layer 15 . Among them, the AlN nucleation layer 11 is grown at high temperature; the GaN buffer layer 12 is an unintentionally doped layer; the thickness of the n-GaN13 layer is 50nm, and the electron concentration is 1×10 18 / cm 3 ; The InGaN / GaN superlattice 14 has 14 periods, each period is composed of a well layer InGaN18 with a thickness of 16nm and a barrier layer GaN19 with a thickness of 8nm, both InGaN and GaN are intrinsic thin films, and the carrier concentration is 2× 10 17 / cm 3 , the In composition in the well layer InGaN is 90%; the thickness of the p-GaN layer 15 is 50nm, and the hole concentration is 1×10 17 / cm 3 . Grid Ni / Au ohmic electrodes 16 are distributed on the surface of p-GaN layer 15 , each electrode has a width of 2...
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