Forming method of semiconductor structure and semiconductor structure

Abstract

The invention provides a forming method of a semiconductor structure. The method comprises the following steps: providing a substrate with a conductive structure, wherein a first dielectric layer covering the conductive structure is formed on the substrate, the interior of the first dielectric layer is provided with a first interconnection layer which penetrates through the thickness of the first dielectric layer, the first interconnection layer is electrically connected with the conductive structure; forming an etch barrier layer on the first dielectric layer and the first interconnection layer; forming a second dielectric layer on the etch barrier layer; etching the second dielectric layer and the etch barrier layer until the first interconnection layer and a part of the first dielectric layer are exposed so as to form an opening; completely filling the opening with an interconnection structure, wherein the interconnection structure is electrically connected with the first interconnection layer. The invention also provides a semiconductor structure. According to the invention, the etch barrier layer is formed between the first dielectric layer and the second dielectric layer and is used as an interface for the first dielectric layer and the second dielectric layer; when the interconnection structure is etched, the interface can be timely discriminated, thus the phenomenon of over-etching on the first dielectric layer can be avoided.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for forming a semiconductor structure and the semiconductor structure. Background technique [0002] In the manufacturing process of a semiconductor device, in order to electrically interconnect the multilayer structure located on the active region, it is necessary to form multiple interconnection layers. The interconnection layer can be formed by metal filling to achieve various functions such as connecting circuits, matching circuits, and changing signal phases. [0003] Such as figure 1 The semiconductor structure shown is formed by the following steps: providing a substrate 11, a conductive structure (not shown) is formed in the substrate 11, forming a first dielectric layer 13 on the substrate 11, etching the first dielectric layer 13 and Metal filling is performed to form the first interconnection layer 131, the second interconnection layer 132, and the th...

AI Technical Summary

Problems solved by technology

Some interconnection layers or interconnection structures must remain insulating, while some interconnection structures or interconnection layers must remain conductive. If the control is not reasonable in the manufacturing process, resulting in the formation of interconnection structures or interconnection layers that need to be insulated. The electrical connection has a great impact on the electrical properties of the entire semiconductor

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