A method for removing carbon impurities by silicon carbide micropowder

Abstract

The invention discloses a method for removing carbon impurities in silicon carbide micropowder. The method comprises the following steps: injecting water into silicon carbide micropowder to prepare slurry, adding a dispersant in the slurry to adjust the PH value, centrifuging the silicon carbide slurry by a centrifugal device, injecting water into the slurry again to prepare slurry, adding floatation oil in the slurry, injecting the mixture into a hydraulic classification device, continuously pumping air to stir, performing hydraulic flotation, then performing alkali washing to the obtained slurry, adjusting the PH value, cleaning, adding a filter aid, performing pressure filtration, placing the product in the oxidizing atmosphere to perform forced drying, and then cooling to room temperature to obtain the purified silicon carbide micropowder product. By adopting the method, the circulation of industrial water can be realized; and silicon carbide is dried in the oxidizing atmosphere, the stability and reliability of the silicon carbide micropowder can be increased, the flow is simple, the equipment dependency degree is low, and the method is suitable for industrialized mass production.

Description

technical field [0001] The invention relates to the purification of silicon-containing compounds, in particular to a method for removing carbon impurities by silicon carbide micropowder. Background technique [0002] The continuous exploitation and use of non-renewable energy such as coal and petroleum will be exhausted within decades. The development and research of new sustainable energy sources have received extensive attention. In this context, silicon solar photovoltaic technology has been flourishing. High-quality silicon wafers are the most critical components in photovoltaic conversion, and in the current silicon wafer processing, cutting silicon rods or silicon ingots into sheets of different diameters and thicknesses through special wire cutting equipment is currently a common way in the world . The cutting principle is to use thousands of steel wires with a diameter of 120-160μ as the cutting carrier, and use cutting fluids such as polyethylene glycol and propy...

AI Technical Summary

Problems solved by technology

However, most of the raw materials used in the processing of silicon carbide blades are prepared by the Acheson method, that is, graphite and quartz raw materials are directly reacted to synthesize silicon carbide at high temperature, resulting in the inevitable introduction of carbon impurities.