Method for making mask, method for performing optical proximity correction on layout pattern

Abstract

The invention relates to a method for producing masks, and an optical proximity correction method for layout patterns. The mask production method comprises steps that: a layout pattern is provided; the layout pattern is segmented into a first layout pattern and a second layout pattern; a first extension segment is formed at a segmentation position of the first layout pattern; a second extension segment is formed at a segmentation position of the second layout pattern; optical proximity correction is carried out upon the first layout pattern and the first extension segment such that a first corrected pattern is obtained, an area of the second extension segment is encircled by the first corrected pattern after graphic simulation; optical proximity correction is carried out upon the second layout pattern and the second extension segment such that a second corrected pattern is obtained, an area of the first extension segment is encircled by the second corrected pattern after graphic simulation; the first corrected pattern is wrote into a first mask; and the second corrected pattern is wrote into a second mask. During graphicalization, at an overlaying position, a pattern width is equal to a target width, and at least a difference between the pattern width and the target pattern width is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for making a mask and an optical proximity correction method. Background technique [0002] The patterning process is a common process in the manufacture of semiconductor devices. It uses the mask as a mask to form the layout pattern on the photoresist layer on the semiconductor substrate to produce a photoresist layer printed on the photoresist layer. Resist layer pattern. [0003] As the critical dimensions of semiconductor devices become smaller and smaller, when the process node (half pitch) of the semiconductor process is less than 32nm, a mask is used as a mask under 193nm (nanometer) water immersion lithography conditions The patterning process of film formation has encountered physical limitations. The distance between adjacent patterns is too small. Due to the optical proximity effect, adjacent patterns will stick together. The solution in the prior art...

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Problems solved by technology

If this problem is to be solved, the lengths of the first extension section and the second extension section should be 70nm respectively, so that the pattern width h at the superposition position is 70nm; in practical applications, the layout pattern is very complicated, and the division position of the layout pattern is based on In the actual situation, the length of the extension at each split position depends on the specific situation, so that the width of the graphics at the superimposed position is equal to the target width. Due to the complexity of the layout graphics, determining the length of the extension at each split position will make the Process efficiency is reduced and time-consuming, so it is not feasible

[0007] The Chinese patent application with the application number "200710037440.4" discloses a graphical method, and the Chinese patent application with the application number "200810040372.1" discloses an optical proximity correction method, but none of them solve the above-mentioned problems

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