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A method for direct growth of graphene on various substrates

A graphene, direct technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems that limit the development and application of graphene, achieve high quality and conductivity, low temperature, and simple growth process Effect

Active Publication Date: 2011-11-30
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned problems all limit the development and application of graphene
The method is simple, the price is cheap, and it is still a big problem to grow high-quality graphene directly on the surface of non-specific substrates. There is no similar work reported in the literature.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The aluminum oxide thin film obtained by atomic layer deposition (ALD) method is used as the substrate, put into the PECVD cavity, and vacuumed to 10 -3 Torr, the substrate is heated to 450°C, methane gas and nitrogen gas are introduced, and the pressure of the controlled gas does not exceed 1 Torr. Turn on the plasma power supply at 100 watts, react for 2 hours, methane is ionized and cracked into active groups CH 3+ 、CH 2 2+ 、CH 3+ , at 450°C, the active groups on the surface of the substrate react, carbon-carbon bonds are formed, dehydrogenated, and connected at the edge, and graphene is grown directly in the way of nucleation-growth-film formation.

Embodiment 2

[0028] SiO 2 As the substrate, put it into the PECVD chamber and evacuate to 10 -3 Torr, the temperature of the substrate is raised to 500°C, ethylene gas is introduced, and the pressure of the gas is controlled at 0.2-0.6 Torr. Turn on the plasma power supply at 80 watts and react for 3 hours to ionize and crack ethylene gas into active groups C 2 h 3 + 、C 2 h 2 2+ 、C 2 h 3+ , the active groups on the surface of the substrate react at 500 ° C, carbon-carbon bonds are formed, dehydrogenated, and connected at the edge, and graphene is directly grown in the way of nucleation-growth-film formation.

Embodiment 3

[0030] Take the quartz plate as the substrate, put it into the PECVD cavity, and evacuate to 10 -3 Torr, the temperature of the substrate is raised to 550°C, ethylene and acetylene gas are introduced, and the pressure of the controlled gas does not exceed 1 Torr. Turn on the plasma power supply at 100 watts and react for 2 hours to ionize and crack ethylene and acetylene into active groups C 2 h 3 + 、C 2 h 2 2+ 、C 2 h 3+ 、C 2 h + , the active groups on the surface of the substrate react at 550°C, carbon-carbon bonds are formed, dehydrogenated, and connected at the edge, and graphene is directly grown in the way of nucleation-growth-film formation.

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Abstract

The invention discloses a method for directly growing graphine on various substrates. The method comprises the following steps: A) putting a substrate material in a plasma enhanced chemical vapor deposition (PECVD) cavity, vacuuming, heating the substrate to 400-600 DEG C, introducing hydrocarbon gases and other noble gases, and controlling the pressure of the gases to be at most 1Torr; and B) switching on a plasma power supply so that the hydrocarbon is ionized and cracked to active groups, and reacting on the substrate surface of 400-600 DEG C, thereby achieving the direct growth of the graphine. By the method in the invention, the problem that high-quality graphine is directly grown on the surface of a non-specific substrate is solved; and the method in the invention has an important sense at the aspects of exploring a large-area direct growth technology of graphine, understanding a growth mechanism of graphine, researching a fundamental physical problem of graphine, exploring practical applications of graphine films and broadening application ranges of graphine.

Description

technical field [0001] The invention relates to a method for growing graphene, more specifically, to a method for directly growing graphene on various substrates. Background technique [0002] Graphene is made of sp 2 Hybridized carbon atoms are bonded, and a single-layer planar graphite with a hexagonal lattice honeycomb two-dimensional structure has extremely high crystal quality and electrical properties. As a strictly two-dimensional crystalline material, graphene has unique physical properties with a carrier concentration as high as 10 13 cm -2 , the mobility exceeds 20000cm 2 V -1 the s -1 , providing a material basis for the preparation of high-performance devices such as transistors and sensors. [0003] The first report of graphene was successfully peeled off from graphite by the research group of Professor A.K. Geim of the University of Manchester in 2004 by mechanical means. A single-layer graphite sheet, namely graphene, can be obtained by peeling off the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/44
Inventor 张广宇时东霞张连昌
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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