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Trichlorosilane vaporizing process

A technology of trichlorosilane and high-purity trichlorosilane, applied in silicon compounds, inorganic chemistry, chemical instruments and methods, etc., can solve the problems of ratio fluctuation, affecting product quality, uneven mixing, etc., to avoid liquid foam Entrainment, good appearance quality, uniform mixing effect

Inactive Publication Date: 2011-11-23
SICHUAN XINGUANG SILICON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when using this mixing device to vaporize chlorosilane, since the vaporization process of chlorosilane is uncontrollable, when the temperature and pressure of the heat exchanger change, the liquid level of chlorosilane will fluctuate accordingly, and the vaporization amount of chlorosilane will also change accordingly , so there is still an error in the ratio control of the chlorosilane gas and hydrogen that actually enter the reduction furnace
In addition, in this device, both the chlorosilane liquid and the hydrogen enter from the upper part of the heat exchanger, that is, the chlorosilane liquid is sprayed with hydrogen, and a small amount of metal impurity compounds in the chlorosilane will enter the reduction furnace together with the hydrogen, affecting product quality; , the vaporization of chlorosilane is not completely steady state, causing the vaporization amount of chlorosilane to fluctuate, which makes the ratio fluctuate. In addition, the hydrogen gas flows rapidly in the tube side, forming a gas beam, which makes the mixing of hydrogen gas and trichlorosilane gas uneven
The above defects cause fluctuations in the ratio of the raw material mixture and uneven mixing, which ultimately affects the reaction in the reduction furnace

Method used

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  • Trichlorosilane vaporizing process
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  • Trichlorosilane vaporizing process

Examples

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Effect test

Embodiment 1

[0039] The trichlorosilane vaporization process enumerated in this embodiment includes the following steps:

[0040] (1) The high-purity trichlorosilane liquid obtained by rectification is measured by the trichlorosilane mass flowmeter 3 and the trichlorosilane flow regulating valve 4, and the adjusted flow rate is 20kmol / h. The trichlorosilane liquid inlet 13 is fed into the tube side of the tube-and-tube heat exchanger 14 of the evaporator 12, the pressure of the evaporator is about 0.5MPa, and the temperature is about 65°C;

[0041] The evaporator 12 provides the heat energy required for the evaporation of trichlorosilane by the external circulating water of the tube side. The external circulating water 10 is the cooling water of the polysilicon reduction furnace barrel, the temperature is 150°C, and the circulation rate is 10000kg / h , the outlet water temperature is 142℃, which can effectively utilize the heat energy of the polysilicon reduction furnace;

[0042] (2) Tric...

Embodiment 2

[0048] The trichlorosilane vaporization process enumerated in this embodiment includes the following steps:

[0049] (1) The high-purity trichlorosilane liquid obtained by rectification is measured by the trichlorosilane mass flowmeter 3 and the trichlorosilane flow regulating valve 4, and the adjusted flow rate is 20kmol / h. The trichlorosilane liquid inlet 13 is fed into the tube side of the tube-and-tube heat exchanger 14 in the evaporator 12, the pressure of the evaporator is about 0.7MPa, and the temperature is about 55°C;

[0050] The evaporator 12 provides the heat energy required for the evaporation of trichlorosilane by the external circulating water of the tube side. The external circulating water 10 is the cooling water of the polysilicon reduction furnace barrel, the temperature is 150°C, and the circulation rate is 10000kg / h , the outlet water temperature is 140℃, which can effectively utilize the heat energy of the polysilicon reduction furnace;

[0051] The tube...

Embodiment 3

[0058] The trichlorosilane vaporization process enumerated in this embodiment includes the following steps:

[0059] (1) The high-purity trichlorosilane liquid obtained by rectification is measured by the trichlorosilane mass flowmeter 3 and the trichlorosilane flow regulating valve 4, and the adjusted flow rate is 20kmol / h. The trichlorosilane liquid inlet 13 is fed into the evaporator 12, and the evaporator 12 includes a lower shell-and-tube heat exchanger 14 and an upper demister 15;

[0060] The shell-and-tube heat exchanger 14 is provided with the heat energy required for the evaporation of trichlorosilane by the external circulating water of the shell-and-tube tube side. It is 10000kg / h, and the outlet water temperature is 140℃, which can effectively utilize the heat energy of the polysilicon reduction furnace;

[0061] The tube side of the tubular heat exchanger 14 is connected with a liquid level gauge 7, which can more accurately control the constant level of trichlo...

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Abstract

The invention relates to a polycrystalline silicon production process, in particular to a trichlorosilane vaporizing process, belonging to the technical filed of production of polycrystalline silicon. The trichlorosilane vaporizing process comprises the following steps of: (1) rectifying to obtain high-purity trichlorosilane liquid, metering and feeding into an evaporator for evaporating; and (2)mixing the trichlorosilane gas obtained through evaporation with metered hydrogen in a gas mixer to obtain a mixed gas. In the trichlorosilane vaporizing process, the trichlorosilane gas is mixed with the hydrogen, so that the uniformly mixed gas with a stable mixture ratio can be obtained; and raw materials are mixed more uniformly, uniform growth of polycrystalline silicon rods in a reduction furnace is promoted, and grown polycrystalline silicon products have uniform crystal grains and better appearance quality.

Description

technical field [0001] The invention relates to a polysilicon production process, in particular to a trichlorosilane vaporization process, and belongs to the technical field of polysilicon production. Background technique [0002] Polysilicon is the basic raw material of the electronics industry and solar photovoltaic industry. With the rapid development of information technology and solar energy industry, the global demand for polysilicon is growing rapidly, and the market is in short supply. [0003] Polycrystalline silicon (p-Si) is a form of elemental silicon. It is a silicon crystal composed of many silicon atoms and many small grains. According to the purity classification, it can be divided into metallurgical grade polysilicon, solar grade and electronic grade polysilicon. Among them, the purity of solar-grade energy polysilicon products is 99.99-99.9999% (4 to 6 nines), the purity of electronic-grade polysilicon products is above 99.9999%, and the ultra-high purity i...

Claims

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Application Information

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IPC IPC(8): C01B33/035
Inventor 刘畅王岭张维刘维
Owner SICHUAN XINGUANG SILICON TECH
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