Device for growing semiconductor crystals

Abstract

The invention relates to a device for growing semiconductor crystals. Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule, carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace. A support cylinder provides structural support for the combined sealed ampoule crucible assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into out of the seed well and transition regions of the crystal growth crucible. A hollow core in the insulation material directly beneath the seed well provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.

Description

[0001] This application is a divisional application of an invention patent application entitled "Method, device, crystal product and device support method for growing semiconductor crystals" and application number 200810147519.7 filed on July 3, 2002. The original application is PCT / US02 / 21195 Invention patent divisional application, the international application entered the Chinese national phase on February 13, 2004, and obtained the Chinese patent application number 02815865.2. [0002] References to earlier applications in the field [0003] This application claims the benefit of US Provisional Application No. 60 / 303,189, entitled "Non-Contact Carbon Doping and Resistivity Control in Gallium Arsenide Growth," filed July 5,2001. technical field [0004] The present invention relates generally to the field of growth of III-V, II-VI and related single crystal compounds, and more particularly to methods and methods for growing semiconductor crystals with strong support, carb...

AI Technical Summary

Problems solved by technology

In the same way that solid crucible support designs are detrimental to temperature control, techniques based on convective heating with gases or fluids also do not address the specific temperature gradient control requirements of most crystal growth techniques, such as vertical gradient solidification (VGF) techniques

[0012] Conventional solutions based on convection and conduction heating techniques cannot provide both precise and controlled heating of the seed wells and reliable physical stability suitable for high-volume crystal production

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