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System and method for detecting wave aberration of photoetching projection objective

A detection system and lithography projection technology, applied in the field of lithography machines, can solve problems such as limited applications

Active Publication Date: 2011-09-28
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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Problems solved by technology

However, this method requires strict knowledge of the coordinates of the measurement space image, which puts forward high requirements for alignment and limits the application of this method

Method used

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  • System and method for detecting wave aberration of photoetching projection objective
  • System and method for detecting wave aberration of photoetching projection objective
  • System and method for detecting wave aberration of photoetching projection objective

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Embodiment Construction

[0072] The present invention will be further described below in conjunction with the examples and drawings, but the examples should not limit the protection scope of the present invention.

[0073] see first figure 1 , figure 1 It is a structural schematic diagram of the wave aberration detection system and method of the lithography machine projection objective lens based on principal component fitting and centering adopted in the present invention. As can be seen from the figure, the projection objective lens wave aberration detection system based on principal component fitting and centering adopted in the present invention includes an illumination source 1, an illumination system 2, a test mask 3, a mask table 4 carrying a test mask 3, a test The test mark 5 on the mask, the projection objective lens 6, the workpiece table 7, the aerial image sensor 8 installed on the workpiece table, and the data processing computer 9 connected with the workpiece table. The aerial image s...

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Abstract

The invention discloses a system and a method for detecting the wave aberration of a photoetching projection objective, and the system and method provided by the invention are used for photoetching machines and based on the centering of principal component fitting of space images. In the invention, an offset between the actually-measured position and nominal position of a space image is found through principal component fitting, thereby obtaining the principal component coefficient and wave aberration of the space image. The method comprises the following steps: firstly, emulating a group of space images, carrying out principal component analysis and linear regression on the space images so as to obtain principal components, a regression matrix, and a spline interpolation function of principal components and emulated space images; scanning the space images by using an X-Z plane used image sensor so as to obtain the space image distribution on the silicon wafer surface of a photoetching machine, then obtaining the offset between the actually-measured position and nominal position of the space image firstly through carrying out a centering process, and then calculating the principalcomponent coefficient corresponding to the offset; and according to the regression matrix and the principal component coefficient, fitting and solving the wave aberration by using the least square method. By using the system and method disclosed by the invention, the centering errors of the space images are compensated, and the solved repeatable accuracy is improved.

Description

technical field [0001] The invention relates to a lithography machine, in particular to a wave aberration detection system and detection method for a lithography projection objective lens based on spatial image principal component fitting and centering for a lithography machine. Background technique [0002] The projection objective lens is one of the core components of the lithography machine system. Waveform aberration in projection objectives can degrade image quality and reduce the process window, reducing yield. As the feature size of lithography continues to decrease, the aberration tolerance of the projection objective lens of the lithography machine becomes more and more stringent. The detection requirements for wave aberration of lithographic projection objective extend from low-order aberration to high-order aberration. Under this premise, it is more important to develop in-situ detection technology that can detect low-order and high-order wave aberration with hig...

Claims

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Application Information

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IPC IPC(8): G03F7/20G01M11/02
Inventor 闫观勇王向朝彭勃徐东波段立峰
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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