Silicon on insulator (SOI) pressure resistant structure with interface lateral variation doping

Abstract

The invention discloses a silicon on insulator (SOI) pressure resistant structure with interface lateral variation doping, and relates to a semiconductor power device comprising a substrate layer, a medium buried layer, an active semiconductor layer and an interface lateral variation doping layer, wherein, the medium buried layer is arranged between the substrate layer and the active semiconductor layer; and the interface lateral variation doping layer is arranged between the medium buried layer and the active semiconductor layer, in the invention, by adopting the condition that the interface lateral variation doping layer is arranged in the active semiconductor layer on the interface of the medium buried layer, when the structure is used in the semiconductor device, and the dosage concentration of the silicon at the top of the lateral variation doping layer terminal interface is higher, thus effectively improving the longitudinal pressure resistance and the lateral pressure resistance of the device, thus the structure can effectively improve the pressure resistance of the whole device, and remit the problem that a 'hot spot' area is generated because the dosage concentration of a source end of a lateral variation doping structure of the whole active semiconductor layer is too low, which can be realized in a thick active semiconductor layer.

Description

technical field [0001] The invention relates to a semiconductor power device, in particular to a power device with an SOI pressure-resistant structure with lateral variable doping at the interface. Background technique [0002] Silicon on insulator (Semiconductor On Insulator or SOI) is a semiconductor material with a new structure developed rapidly in the 1980s. Its unique structural characteristics overcome the shortcomings of many bulk silicon materials and give full play to the potential of silicon integrated circuit technology. Known as the silicon integration technology of the 21st century, it has received extensive attention and in-depth research from many scholars at home and abroad. [0003] SOI High Voltage Integrated Circuit (High Voltage Integrated Circuit, HVIC) integrates SOI technology, microelectronics technology and power electronics technology, and has become a new branch in the field of power integrated circuits. It has developed rapidly in recent years. ...

AI Technical Summary

Problems solved by technology

The existing problems are the poor reproducibility of the SIPOS process and large leakage current; Literature: Guo Yufeng, Li Zhaoji, Zhang Bo, etc., "New structure and withstand voltage model of SOI high-voltage devices with fixed charges in the buried oxide layer", Journal of Semiconductors, pp1623-1628 (2004), proposed a new SOI (Step Buried Oxide Charge, SBOC) high-voltage device structure with step-distributed buried oxygen interface charges, and fixed interface charges were formed by implanting heavy ions on the surface of the buried oxide layer; US patents: Dieter Silber, Wolfgang Wondrak, Robert Plikat, Patent, 6495864, Dec. 17, 2002, as image 3 shown

This structure uses n (linear or step-doped) thin Si layer to significantly increase the critical breakdown electric field to improve the electric field of the buried oxide layer and the device withstand voltage, but the extremely low concentration of the drift region at the source makes the source form a "hot spot" and advance breakdown

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