Flash memory and its programming method
A flash memory and programming unit technology, applied in information storage, static memory, read-only memory, etc., can solve the problems of lowering of shielding voltage Vinh, lowering of shielding voltage, interference with storage units, etc., to achieve programming accuracy, increase reading speed, and avoid The effect of the leakage problem
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[0028] The implementation of the present invention is described below through specific examples and in conjunction with the accompanying drawings, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific examples, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0029] Figure 4 It is a schematic diagram of a flash memory structure in a preferred embodiment of the present invention. Such as Figure 4 As shown, a flash memory of the present invention includes: a memory cell array 410 , a bit line refresh circuit 420 and a column gate circuit 430 .
[0030] The memory cell array 410 is similar to the prior art. It is an array of flash memor...
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