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Method for preparing nitrogen-doped graphene

A technology of nitrogen-doped graphene and graphene, which is applied in the field of material synthesis chemistry, can solve the problems of dangerous chemical reagents, difficulty in preparation, and high cost, and achieve the effects of low risk, simple and easy preparation method, and low cost

Inactive Publication Date: 2011-07-13
NANJING UNIV
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Problems solved by technology

[0006] In order to solve the problems of high toxicity and dangerous chemical reagents used in the current preparation method of nitrogen-doped graphene, difficult preparation and high cost, the technical purpose of the present invention is to propose a new low-cost, large-scale production of nitrogen-doped graphene. method, which makes the method easy to implement, and can prepare graphene with a high nitrogen doping ratio, and the products prepared by this method can be widely used in the fields of electronic devices, composite materials, sensing, biological analysis, etc. Research

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Examples

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Embodiment 1

[0027] 1) The preparation method of the raw material melamine: recrystallize the melamine, use water as the solvent, and vacuum-dry the crystal obtained by filtration, and store the product after mortar grinding in a desiccator for future use.

[0028] 2) Preparation method of raw material graphene oxide: analysis of pure natural graphite powder after pre-oxidation and oxidation by improved Hummers' method (for specific operation methods, see: 1. Kovtyukhova, N. I.; Ollivier, P. J.; Martin, B. R.; Mallouk, T. E.; Chizhik, S.A.; Buzaneva, E. V.; Gorchinskiy, A. D. Layer-by-Layer Assembly of Ultrathin Composite Films from Micron-Sized Graphite Oxide Sheets and Polycations. Chem. Mater. 1999, 11, 771-778; and 2. Hummers, W. S.; Offeman, R. E. Preparation of Graphitic Oxide . J. Am. Chem. Soc. 1958, 80, 1339~1339.), filtered and washed, the remaining viscous solid was put into a dialysis bag, dialyzed until the pH value was close to neutral, and the obtained product was dried as...

Embodiment 2

[0031] The preparation method of this example is the same as that of Example 1, wherein the mass ratio of oxidized graphite and melamine in step 3 is adjusted to 1:1, 1:10, 1:20, and the black product is also obtained under other conditions unchanged—— Nitrogen doped graphene.

Embodiment 3

[0033] The preparation method of this example is the same as that of Example 1, and the reaction temperature in step 3 is adjusted to 700°C, 900°C, 1000°C, and 1200°C respectively. Under the same conditions, the black product—nitrogen-doped graphene is also obtained.

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Abstract

The invention relates to a method for preparing nitrogen-doped graphene, in particular to a novel simple, convenient and scale method for preparing nitrogen-doped graphene at high temperature under the protection of inert gas by taking melamine as a nitrogen source. In the method, graphene oxide and the melamine are taken as raw materials, wherein the melamine is taken as the nitrogen source and the graphene oxide is taken as a carbon source; high temperature annealing is carried out in the atmosphere of inert gas, and the reduction of the graphene oxide and the nitrogen doping of graphene are realized; and by controlling reaction conditions such as temperature, time, the ratio of the raw materials and the like, graphene products with different nitrogen doping ratios can be prepared. The preparation method is simple and practicable; catalysts are not needed; the reaction process is easy to control; special requirements on equipment do not exist; the cost is low; and the method is easy to promote and use.

Description

technical field [0001] The invention relates to a preparation method of nitrogen-doped graphene, in particular to a simple and large-scale new method for preparing nitrogen-doped graphene at high temperature under the protection of an inert gas by using melamine as a nitrogen source, and belongs to the field of material synthesis chemistry. Background technique [0002] As a semiconductor with zero energy gap, an important prerequisite for the application of graphene in microelectronic devices is that its band gap and carrier concentration can be adjusted, and chemical doping is an effective means to achieve this adjustment. Therefore, the doping of graphene has become a hot spot for researchers in many disciplines of physics, chemistry and materials science. The preparation of doped graphene is of great significance for in-depth study of its application in the field of nanoelectronics. [0003] The doping of graphene was first proposed by physics researchers. So far, vario...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 夏兴华盛振环
Owner NANJING UNIV
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