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A method for fabricating thin films

A technology for thin films and thin film materials, applied in the field of thin film preparation, can solve problems such as low thermal conductivity and low ablation threshold

Inactive Publication Date: 2011-02-23
IMRA AMERICA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, for applications in materials synthesis, these methods are limited to those target materials with very low thermal conductivity and low ablation threshold

Method used

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  • A method for fabricating thin films
  • A method for fabricating thin films
  • A method for fabricating thin films

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Embodiment Construction

[0053] Embodiments of the present PLD invention generally use bursts of pulses for material synthesis to tune or otherwise control material morphology. For example, one or more laser pulses can be used to prepare thin films to create a distribution of nanoparticles with a single ultrashort pulse. Bursts of other pulses can be used to produce smooth, nearly grain-free films. The burst parameters, or parameters of the pulses in a burst, can be based on known target emission characteristics. For example, burst widths of tens of nanoseconds, hundreds of nanoseconds, and up to several microseconds in combination with pulse widths in the range of about 50 fs to about 100 ps may be used. Typically, the first pulse at least initiates a laser interaction with the target material, and at least the second pulse interacts with by-products of said interaction. The interaction may be laser ablation and the by-product may include a plume comprising charged and neutral particles.

[0054] ...

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PUM

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Abstract

A method of pulsed laser deposition (PLD) capable of continuously tuning formed-film morphology from that of a nanoparticle aggregate to a smooth thin film free of particles and droplets. The materials that can be synthesized using various embodiments of the invention include, but are not limited to, metals, alloys, metal oxides, and semiconductors. In various embodiments a 'burst' mode of ultrashort pulsed laser ablation and deposition is provided. Tuning of the film morphology is achieved by controlling the burst-mode parameters such as the number of pulses and the time-spacing between the pulses within each burst, the burst repetition rate, and the laser fluence. The system includes an ultrashort pulsed laser, an optical system for delivering a focused onto the target surface with an appropriate energy density, and a vacuum chamber in which the target and the substrate are installed and background gases and their pressures are appropriately adjusted.

Description

[0001] Cross References to Related Applications [0002] This application claims the priority of the application No. 61 / 039,883 whose filing date is March 27, 2008, and whose invention title is "A Method for Fabricating Thin Films (A Method for Fabricating Thin Films)". This application claims that the filing date is October 20, 2008, and the title of the invention is "A Method for Fabricating Thin Films (A Method for Fabricating Thin Films)" application No.12 / 254,076; the application claims that the filing date is On March 27, 2008, the priority of the application No. 61 / 039,883 entitled "A Method for Fabricating Thin Films" was filed. This application is also related to Application No. 11 / 798,114, filed May 10, 2007, entitled "Method for Depositing Crystalline Titania Nanoparticles and Films" (Method for Depositing Crystalline Titania Nanoparticles and Films), which Published as US Patent Application Publication No. 2008 / 0187864 and assigned to the assignee of the present inv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/44
CPCH01S3/0057H01S3/2308H01S3/0085C23C14/564C23C14/28C23C14/08H01L21/02631
Inventor 村上真胡震东刘冰车勇刘振林上原讓
Owner IMRA AMERICA
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