Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for rapidly growing Nb205 crystal

A crystal and fast technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of low crystal quality, poor repeatability, cumbersome operation, etc., achieve process simplification, reduce preparation cost, and simple operation Effect

Inactive Publication Date: 2011-02-02
BEIJING UNIV OF TECH
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This process uses a single crystal furnace to heat an ellipsoidal halogen lamp. The crystal quality is not high, the operation is cumbersome, and the repeatability is poor.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for rapidly growing Nb205 crystal
  • Method for rapidly growing Nb205 crystal
  • Method for rapidly growing Nb205 crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1: The crystal growth furnace used in this embodiment is the FZ-T-10000-VI-VPO-PC optical floating zone crystal growth furnace produced by Japan Crystal Systems Corporation.

[0025] (1) Nb 2 o 5 The powder is packed into a long rubber balloon for compaction, and the rubber ball filled with the powder is placed under isostatic pressure to make a biscuit rod.

[0026] (2) One of the biscuit rods obtained in (1) is fixed on the seed crystal rod of the crystal furnace as a seed crystal, and the other is suspended on the material rod as a material rod.

[0027] (3) In the air atmosphere, the halogen lamp of the single crystal furnace outputs a power of 1600W / h, the seed rod and the raw material rod rotate counterclockwise at 15rpm respectively, and the raw material rod and the seed rod rotate downward at a rate of 8mm / h respectively , moving up and through the melting zone for crystal growth.

[0028] from figure 1 : As can be seen from the crystal morphology...

Embodiment 2

[0029] Embodiment 2: The crystal growth furnace used in this embodiment is the FZ-T-10000-VI-VPO-PC optical floating zone crystal growth furnace produced by Japan Crystal Systems Corporation.

[0030] (1) Nb 2 o 5 The powder is packed into a long rubber balloon for compaction, and the rubber ball filled with the powder is placed under isostatic pressure to make a biscuit rod.

[0031] (2) One of the biscuit rods obtained in (1) is fixed on the seed crystal rod as the seed crystal, and the other is suspended on the material rod as the material rod.

[0032] (3) In the air atmosphere, the halogen lamp of the single crystal furnace outputs a power of 1650W / h, the seed rod and the raw material rod rotate counterclockwise at 20rpm respectively, and the raw material rod and the seed rod rotate downward at a rate of 10mm / h respectively , moving up and through the melting zone for crystal growth.

[0033] from figure 2 Nb 2 o 5 The characteristic peaks shown in the crystalline ...

Embodiment 3

[0034] Embodiment 3: The crystal growth furnace used in this embodiment is the FZ-T-10000-VI-VPO-PC optical floating zone crystal growth furnace produced by Japan Crystal Systems Corporation.

[0035] (1) Nb 2 o 5 The powder is packed into a long rubber balloon for compaction, and the rubber ball filled with the powder is placed under isostatic pressure to make a biscuit rod.

[0036] (2) One of the biscuit rods obtained in (1) is fixed on the seed crystal rod as the seed crystal, and the other is suspended on the material rod as the material rod.

[0037](3) In the air atmosphere, the halogen lamp of the single crystal furnace outputs a power of 1720W / h, the seed rod and the raw material rod rotate counterclockwise at 20rpm respectively, and the raw material rod and the seed rod rotate downward at a rate of 12mm / h respectively , moving up and through the melting zone for crystal growth.

[0038] from image 3 : Nb 2 o 5 Crystal transmission electron microscope diffracti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for rapidly growing Nb205 crystal, belonging to the field of Nb205 crystal growth. The method comprises the following steps: preparing Nb205 powder into biscuit rods; taking one biscuit rod as a seed crystal on a seed rod and hanging the other biscuit rod on a charge bar rod as a charge bar; causing the tail ends of the two charge bars to contact; forming a straight line with a halogen lamp at the contact part in the horizontal direction; causing the two charge bars to form a straight line in the vertical direction; in the air atmosphere, causing the halogen lamp of a single crystal furnace to reach a power output of 1600-1750W / h in 0.2-0.5h; heating to cause the contact part of the two charge bars to be melted so as to form a melting zone; retaining the power output, causing the seed rod and a raw material rod to rotate in the reverse direction at a velocity of 15-20rmp; and causing the raw material and the seed rod to move up and down at a velocity of 8-15mm / h to pass the melting zone to grow the crystal. The product of the invention has the characteristics of no impurities, simple instruments, low cost, fast growth speed and no need of special atmosphere.

Description

technical field [0001] The present invention belongs to Nb 2 o 5 The field of crystal growth, specifically related to a rapidly growing centimeter-scale Nb 2 o 5 Crystal method. Background technique [0002] Crystal materials play a very important role in the development of science and technology. They are the important cornerstone of the information age and the material basis for the development of high technology. Crystal materials mainly include: semiconductor single crystal material, laser crystal material, scintillation crystal material, nonlinear optical crystal material, piezoelectric crystal material, ferroelectric crystal material, magneto-optic crystal material, superconducting crystal material. The main single crystal preparation techniques mainly include: melt growth, solution growth, vapor phase growth, and solid phase growth. The floating zone method is a method of melt growth. A melting zone is formed between the growing crystal and the polycrystalline ro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B13/22
Inventor 王越范修军徐宏蒋毅坚
Owner BEIJING UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products