Electrostatic discharge protection circuit with multi-power area integrated circuit

Abstract

The invention provides an electrostatic discharge protection circuit with a multi-power area integrated circuit, comprising a first ESD (electrostatic discharge) protection element, a first internal circuit, a first switch, a first ESD detection circuit, a second internal circuit and a second ESD protection element, wherein the ESD protection element is coupled between a first power supply wire and a first ground wire; the first internal circuit has a first end coupled to the first power supply wire; the first switch is coupled between a second end of the first internal circuit and a second ground wire; the first ESD detection circuit is coupled between a second power supply wire and a second ground wire, and coupled to the first switch for detecting an electrostatic discharge signal and disconnecting the first switch when the electrostatic discharge signal is generated; the second internal circuit coupled between the second power supply wire and the first ground wire; and the second ESD protecting element coupled between the second power supply wire and the second ground wire, and the first power supply wire is different from the second power supply wire and the first ground wire is different from the second ground wire.

Description

technical field [0001] The present invention relates to an electrostatic discharge protection circuit with multiple power supply area integrated circuits, and in particular to an electrostatic discharge protection circuit with multiple power supply area integrated circuits that makes non-conduction between internal circuits and power supply lines or ground lines when an electrostatic discharge signal is detected protection circuit. Background technique [0002] Generally speaking, an integrated circuit has an ESD (Electrostatic Discharge, electrostatic discharge) protection mechanism, which is generally set up between the input / output pad and the internal circuit. However, an integrated circuit usually has multiple power domains, and the interfaces between these power domains may also have ESD phenomena. In high-speed circuits, the gate oxide layer of transistors is usually thinner, so the ESD current may break through and cause damage to the circuit. Some integrated circu...

AI Technical Summary

Problems solved by technology

However, an integrated circuit usually has multiple power domains, and the interface between these power domains may also have ESD phenomena.

In high-speed circuits, the gate oxide of transistors is usually thin, so it may be broken by ESD current and cause damage to the circuit

Some integrated circuits may have ESD protection components on the signal transmission path between these power supply areas, but such components often cause signal delays and cannot meet the high-speed requirements of the circuit

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