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Production method for high-purity boron tribromide

A boron tribromide and production method technology, applied in the field of materials, can solve problems such as unsatisfactory, and achieve the effects of improved efficiency, convenient operation, and low price of finished products

Active Publication Date: 2010-11-24
贵州威顿晶磷电子材料股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It still cannot meet the requirements of high-purity boron tribromide for solar cells, integrated circuits, separation devices and semiconductor materials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] A production method of high-purity boron tribromide, comprising the following steps:

[0017] (1) Take 26KG of industrial-grade boron tribromide in a 15L quartz container, add granular activated carbon with a particle size of 1-3mm at a ratio of 1%, keep it under slight stirring for 60 minutes, and filter it with microporous polytetrafluoroethylene below 0.05 microns filter;

[0018] (2) the obtained filtrate is distilled through a subboiling still, and the voltage of the heating tube is adjusted to stabilize the liquid surface temperature in the range of 66-70°C;

[0019] (3) The resulting distilled product is introduced into a tray type rectification tower for distillation and reflux, and the reflux time is 5 hours to remove low boilers, and the pure boron tribromide obtained by taking the 89-93 ° C fraction is introduced into another rectification tower for further refinement Distillation, reflux time 5 hours;

[0020] (4) Take the 89-92.5°C fraction and send it to...

Embodiment 2

[0023] A production method of high-purity boron tribromide, comprising the following steps:

[0024] (1) Take 26KG of industrial-grade boron tribromide in a 15L quartz container, add granular activated carbon with a particle size of 1-3mm at a ratio of 2%, keep it under slight stirring for 80 minutes, and then filter it with microporous polytetrafluoroethylene below 0.05 microns filter;

[0025] (2) The obtained filtrate is distilled through a special sub-boiling still, and the voltage of the heating tube is adjusted to stabilize the liquid surface temperature in the range of 60-65°C;

[0026] (3) The resulting distilled product is introduced into a tray type rectification tower for distillation and reflux, the reflux time is 6 hours, low boilers are removed, and the pure boron tribromide obtained by taking the 89-93 ° C fraction is introduced into another rectification tower for further refinement Distillation, reflux time 6 hours;

[0027] (4) Take the 89-92.5°C fraction a...

Embodiment 3

[0030] A production method of high-purity boron tribromide, comprising the following steps:

[0031] (1) Take 26KG of industrial-grade boron tribromide in a 15L quartz container, add granular activated carbon with a particle size of 1-3mm at a ratio of 1.5%, keep it under slight stirring for 70 minutes, and filter it with microporous polytetrafluoroethylene below 0.05 microns filter;

[0032] (2) The obtained filtrate is distilled through a special sub-boiling distiller, and the voltage of the heating tube is adjusted to stabilize the liquid surface temperature in the range of 70-75°C;

[0033] (3) The resulting distilled product is introduced into a tray type rectification tower for distillation and reflux, the reflux time is 6 hours, low boilers are removed, and the pure boron tribromide obtained by taking the 89-93 ° C fraction is introduced into another rectification tower for further refinement Distillation, reflux time 6 hours;

[0034] (4) Take the 89-92.5°C fraction ...

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PUM

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Abstract

The invention discloses a production method for high-purity boron tribromide, which comprises the following steps of: placing industrial grade boron tribromide into a container, adding 1 to 2 percent of decoloration adsorbent, keeping with slightly stirring for 60 to 80 minutes, and filtering by using a microfilter of below 0.05 micron; distilling the obtained filtrate by using a sub-boiling distiller, and adjusting the heating pipe voltage-stabilized liquid level temperature to be 60 to 75 DEG C; feeding the obtained distillate into a plate rectification column for distillation reflux, controlling the reflux time to be 5 to 6 hours, removing a low-boiling-point substance, feeding a boron tribromide pure product obtained from 89 to 93-degree centigrade distillate to another rectification column for rectification again, and controlling the reflux time to be 5 to 6 hours; and feeding 89 to 92.5-degree centigrade distillate into a finished product groove, and after the product is detected to be qualified, filtering and packing under the purification environment of which the whole is no more than a thousand level and of which the part is no more than a hundred level to obtain a high-purity boron tribromide product of 99.99999 percent. The method has the advantages of simple process, convenient operation, easy quality control and low finished product cost.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a production method of microelectronic industrial materials. Background technique [0002] In recent years, with the increasingly serious problems of energy shortage and environmental pollution, solar cells have obtained good development opportunities due to their clean, environmentally friendly and renewable advantages. Countries have formulated incentive policies for photovoltaic power generation and huge photovoltaic engineering plans. The solar cell industry has created a huge market space and led it into a rare period of rapid development. Statistics show that in the past 10 years, the scale of the global solar cell industry has expanded nearly 35 times. [0003] However, the cost of solar cells is higher than that of hydropower and coal power, which seriously restricts the large-scale application of solar cells. Major battery manufacturers are also pursuing l...

Claims

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Application Information

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IPC IPC(8): C01B35/06
Inventor 王天喜吴跃友汪忠发
Owner 贵州威顿晶磷电子材料股份有限公司
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