Super-junction metal oxide field effect transistor with surface buffering ring terminal structure

Abstract

The invention discloses a super-junction metal-oxide field effect transistor with a surface buffering ring terminal structure, comprising an N-type doped semiconductor substrate, wherein an N-type doped epitaxial layer is arranged on the N-type doped semiconductor substrate, a P-type doped deep well region is arranged inside the N-type doped epitaxial layer, a P-type doped region and a P-type doped buffer region are arranged at the upper side of the P-type doped deep well region, and a high-concentration N-type doped region is arranged in the P-type doped region; polysilicon is arranged abovepartial gate oxide layer, and the polysilicon forms a polysilicon field plate structure at a terminal structure region and also forms a double-layer field plate together with a metal field plate which extends to a traditional region from a source end in the super-junction metal oxide field effect transistor with the surface buffering ring terminal structure; therefore, the surface field peak value can be reduced, the surface potential distribution is optimized, and the transverse pressure resistance level of components is effectively improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to a vertical high-voltage power device, more specifically, to a vertical super-junction metal oxide field with a surface buffer ring terminal structure having both fast switching and low on-resistance. effect transistor. Background technique [0002] The super junction metal oxide field effect transistor is a new type of device that has the advantages of the insulated gate structure of the metal oxide semiconductor transistor and has the advantages of high current density and low on-resistance. It is a kind of device that can effectively reduce the traditional power metal Oxide Semiconductor Field Effect Transistors Conduction Loss in Power Semiconductor Devices. It is a charge compensation device based on the principle of charge balance. [0003] Traditional high-voltage power metal oxide semiconductor field effect transistor devices use a low-doped epitaxial d...

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Problems solved by technology

These methods are all to achieve a better withstand voltage of the super junction metal oxide field effect transistor terminal structure. However, these methods will add additional manufacturing processes, which will increase the difficulty and cost of the process.

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