Transistor series high-speed high-pressure solid-state switch

Abstract

The invention relates to a high-speed high-pressure solid-state switch, which adopts a plurality of transistors being connected in series and parallel to be served as a main switch. The high-speed high-pressure solid-state switch comprises a static and dynamic voltage balance network, a mutual inductor type pulse transformer, a transistor grid electrode driving circuit, a control circuit and a main switch tube, wherein the control circuit processes a TTL electrical level pulse-width signal, produces switching on / off pulse, sends the switching on / off pulse to the primary level of the mutual inductor type pulse transformer and generates corresponding switching on / off pulse on the secondary level of the pulse transformer. When the pulse is switched on, the transistor grid electrode voltage is higher than 10V; when the pulse is switched off, the transistor grid electrode voltage is lower than 1V. The purpose of controlling the switching on time of the high-pressure solid-state switch can be obtained by controlling the TTL electrical level pulse-width signal, and the high-pressure solid-state switch can work in the pulse state and can work in the continuous switching-on state.

Description

technical field [0001] The present invention relates to modern power electronic technology, in particular to a high-voltage solid-state switch, which is mainly a switch composed of a new type of controllable power electronic power device (power insulated gate field effect transistor MOSFET and insulated gate bipolar transistor IGBT). Various high-voltage fields that require fast switching. Background technique [0002] The solid-state switches used in modern power electronic circuits are mainly composed of solid-state devices through specific combinations. Commonly used solid-state devices include semiconductor devices such as thyristor SCR, insulated gate field effect transistor MOSFET and insulated gate bipolar transistor IGBT. With the development and maturity of solid-state semiconductor devices, especially insulated gate field effect transistor MOSFET and insulated gate bipolar transistor IGBT, the working voltage, current and switching speed have been greatly improved,...

AI Technical Summary

Problems solved by technology

Depend on image 3 It can be seen that as the pulse width increases, the gate voltage of the transistor decreases accordingly. When it is small enough, the transistor will enter the linear region and lose the switching function.

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